8
Internal Memory
The TM4C1294NCPDT microcontroller comes with 256 KB of bit-banded SRAM, internal ROM,
1024 KB of Flash memory, and 6KB of EEPROM.
The TM4C1294NCPDT microcontroller provides 1024 KB of on-chip Flash memory. The Flash
memory is configured as four banks of 16K x 128 bits (4 * 256 KB total) which are two-way
interleaved. Memory blocks can be marked as read-only or execute-only, providing different levels
of code protection. Read-only blocks cannot be erased or programmed, protecting the contents of
those blocks from being modified. Execute-only blocks cannot be erased or programmed, and can
only be read by the controller instruction fetch mechanism, protecting the contents of those blocks
from being read by either the controller or by a debugger.
The TM4C1294NCPDT microcontroller provides enhanced performance and power savings by
implementation of two sets of instruction prefetch buffers. Each prefetch buffer is 2 x 256 bits and
can be combined as a 4 x 256-bit prefetch buffer.
The EEPROM module provides a well-defined register interface to support accesses to the EEPROM
with both a random access style of read and write as well as a rolling or sequential access scheme.
A password model allows the application to lock one or more EEPROM blocks to control access on
16-word boundaries.
8.1
Block Diagram
Figure 8-1 on page 601 illustrates the internal memory and control structure . The dashed box in the
figure indicate registers residing in the System Control module.
June 18, 2014
600
Texas Instruments-Production Data
Internal Memory