27.13
EEPROM
Table 27-33. EEPROM Characteristics
a
Unit
Max
Nom
Min
Parameter Name
Parameter
cycles
-
-
500,000
Number of mass program/erase cycles of a single word
c
EPE
CYC
b
years
-
-
20
Data retention with 100% power-on hours at T
J
=85˚C
ET
RET
years
-
-
11
Data retention with 10% power-on hours at T
J
=125˚C and
90% power-on hours at T
J
=100˚C
ET
RET_EXTEMP
μs
600
110
-
Program time for 32 bits of data with memory space available
ET
PROG
ms
-
30
-
Program time for 32 bits of data in which a copy to the copy
buffer is required, the copy buffer has space and less than
10% of EEPROM endurance used
ms
900
-
-
Program time for 32 bits of data in which a copy to the copy
buffer is required, the copy buffer has space and greater
than 90% of EEPROM endurance used
ms
-
60
-
Program time for 32 bits of data in which a copy of the copy
buffer is required, the copy buffer requires an erase and less
than 10% of EEPROM endurance used
ms
1800
-
-
Program time for 32 bits of data a copy to the copy buffer is
required, the copy buffer requires an erase and greater than
90% of EEPROM endurance used
system clocks
9+4*(
EWS
)
7+
2*(
EWS
)
-
Read access time
d
ET
READ
ms
15
8
-
Mass erase time, <1k cycles
ET
ME
ms
40
15
-
Mass erase time, 10k cycles
ms
500
75
-
Mass erase time, 100k cycles
a. Because the EEPROM operates as a background task and does not prevent the CPU from executing from Flash memory,
the operation will complete within the maximum time specified provided the EEPROM operation is not stalled by a Flash
memory program or erase operation.
b. One word can be written more than 500K times, but these writes impact the endurance of the words in the meta-block
that the word is within. Different words can be written such that any or all words can be written more than 500K times
when write counts per word stay about the same. See the section called “Endurance” on page 620 for more information.
c. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
d. The
EWS
field is programmed in the
MEMTIM0
register at Sysctl Offset 0x0C0.
June 18, 2014
1848
Texas Instruments-Production Data
Electrical Characteristics