Bill of Materials
18
SNVU637 – October 2018
Copyright © 2018, Texas Instruments Incorporated
Using the LMG3411EVM-029 Half-Bridge and LMG34XX-BB-EVM Breakout
Board EVM
8
Bill of Materials
Table 5. LMG3411EVM-029 List of Materials
QTY DESIGNATOR
DESCRIPTION
PART NUMBER
MANUFACTURER
2
C1, C15
CAP, CERM, 1 µF, 16 V, +/- 10%, X5R,
0402
EMK105BJ105KVHF
Taiyo Yuden
4
C6, C7, C20, C21
CAP, CERM, 68 pF, 50 V, +/- 5%,
C0G/NP0, 0402
GRM1555C1H680JA01D
MuRata
4
C2, C16, C27, C29
CAP, CERM, 0.1 µF, 50 V, +/- 10%, X7R,
0402
C1005X7R1H104K050BB
TDK
2
C3, C18
CAP, CERM, 22 pF, 50 V, +/- 5%,
C0G/NP0, 0402
C1005C0G1H220J050BA
TDK
2
C5, C19
CAP, CERM, 0.22 µF, 50 V, +/- 10%, X7R,
0603
C1608X7R1H224K080AB
TDK
1
C4
CAP, CERM, 47 µF, 25 V, +/- 20%, X5R,
1206_190
C3216X5R1E476M160AC
TDK
2
C14, C22
CAP, CERM, 2.2uF, 25V, +/-10%, X7R,
0805
GRM21BR71E225KA73L
MuRata
4
C8, C9, C10, C11
CAP, CERM, 0.01uF, 1000V, +/-10%, X7R,
1206
C1206X103KDRAC7800
Kemet
2
C12, C13
CAP, CERM, 0.047 µF, 1000 V, +/- 10%,
X7R, 1812
C1812V473KDRACTU
Kemet
6
C23, C24, C25, C26,
C31, C32
CAP, CERM, 4.7 µF, 35 V, +/- 10%, X5R,
0603
GRM188R6YA475KE15D
MuRata
1
C17
CAP, CERM, 10 µF, 25 V, +/- 10%, X7R,
1206_190
C1206C106K3RACTU
Kemet
2
C28, C30
CAP, CERM, 4.7 µF, 16 V, +/- 10%, X7R,
AEC-Q200 Grade 1, 0805
GCM21BR71C475KA73K
MuRata
4
D2, D3, D6, D7
Diode, Schottky, 20 V, 0.5 A, SOD-123
MBR0520LT1G
ON Semiconductor
2
D4, D5
Diode, Zener, 16 V, 500 mW, SOD-123
MMSZ4703T1G
ON Semiconductor
1
H2
'Cool Innovations Heat sink 1.00''x1.00''
3-101004U
Cool Innovations
1
J1
Header, 2.54mm, 6x1, Gold, R/A, TH
90121-0766
Molex
2
L1, L2
Inductor, Wirewound, 22 µH, 0.49 A, 0.56
ohm, SMD
BRC2518T220K
Taiyo Yuden
2
L3, L4
Coupled inductor, 0.2 A, 0.45 ohm, SMD
ACM2520-601-2P-T002
TDK
2
Q1, Q2
600-V 70mohm GaN With Integrated Driver
and Cycle-by-cycle Overcurrent Protection,
RWH0032A (VQFN-32)
LMG3411R070RWHT
Texas Instruments
1
Q3
MOSFET, N-CH, 20 V, 0.75 A, SOT-23
MGSF1N02LT1G
ON Semiconductor
1
R1
RES, 0, 5%, 0.1 W, 0603
CRCW06030000Z0EA
Vishay-Dale
4
R3, R4, R8, R19
RES, 49.9, 1%, 0.063 W, 0402
RC0402FR-0749R9L
Yageo America
1
R6
RES, 15 k, 5%, 0.063 W, 0402
CRCW040215K0JNED
Vishay-Dale
1
R611
RES, 17.8 k, 1%, 0.063 W, 0402
CRCW040217K8FKED
Vishay-Dale
2
R5, R10
RES, 10.0 k, 1%, 0.1 W, 0402
ERJ-2RKF1002X
Panasonic
1
R12
RES, 100 k, 1%, 0.063 W, 0402
RC1005F104CS
Samsung Electro-
Mechanics
2
T1, T2
Transformer, 475uH, SMT
760390014
Wurth Elektronik
1
H1
'Bergquist double sided thermal tape
'TI-Bond Ply100
0.005"/.127mm(1).cu-
27.0mm by 27.0mm
Bergquist
3
TP1, TP2, TP3
Edge-Mount Pin, Gold
3620-1-32-15-00-00-08-0
Mill-Max
2
U1, U3
High Speed, Robust EMC Reinforced Triple-
Channel Digital Isolator, DBQ0016A (SSOP-
16)
ISO7731DBQR
Texas Instruments
2
U4, U5
Low-Noise 1 A, 420 kHz Transformer Driver,
DBV0006A (SOT-6)
SN6505BDBVR
Texas Instruments