Texas Instruments DRV425EVM Скачать руководство пользователя страница 4

VDD

REFOUT

VR1

4

-

=

OUT

OUT

shunt

V

V

B

G x Gfg x R

4 x 12.2 x R1

=

=

EVM Operation

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4

SLOU410B – September 2015 – Revised April 2020

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Copyright © 2015–2020, Texas Instruments Incorporated

DRV425 Evaluation Module

4

EVM Operation

Factory setup of the DRV425EVM is for an input supply voltage range from 3.3 V to 5 V. Resistors R3
through R8 configure the reference voltage and bandwidth settings of the DRV425EVM. The default
conditions are listed in

Table 2

.

Table 2. Factory Configuration Defaults

RESISTOR

FUNCTION

DEFAULT CONDITION

R3

Pull-up for BSEL to VDD

0

Ω

R4

Pull-down for BSEL to GND

open

R5

Pull-up for RSEL0 to VDD

0

Ω

R6

Pull-down for RSEL0 to GND

open

R7

Pull-up for RSEL1 to VDD

0

Ω

R8

Pull-down for RSEL1 to GND

open

If the default condition is not the desired configuration of the DRV425EVM, simply remove and replace the
resistors for the desired operating mode. If there is a desire to modify the state of the reference voltage or
device bandwidth during physical operation of the EVM, resistors R3 through R8 can be removed and
driven directly via GPIO pins on a microprocessor using fly wires.

4.1

Error and Over Range

R2 and R9 are 10-k

Ω

pull-up resistors on the Over Range (/OR) and Error (/ER) flag output pins

respectively. To observe the state of the flags, simply probe the chip side of the resistor. These outputs
are open drain and a pull up is required to observe the active low output state. These pins may also be fly-
wired to a micro controller for use as interrupt pins.

4.2

Calculation of Magnetic Field Strength

The magnetic field strength (B) can be calculated by

Equation 1

.

(1)

The maximum magnetic field range of the DRV425 is ±2 mT. With the 100

Ω

shunt located at R1, the

maximum field measurement range is ±500 µT.To increase the sensitivity, R1 can be adjusted based on

Equation 1

. Higher magnetic fields result in increased current flowing through R1. The output voltage of

the differential amplifier in the DRV425 will reach its peak amplitude with a maximum voltage drop across
R1 as shown in

Equation 2

.

(2)

Содержание DRV425EVM

Страница 1: ...Bill of Materials 6 List of Figures 1 Magnetic Field Axis of Sensitivity 2 2 Board Modification for External Reference 3 3 Output Voltage vs Magnetic Field Strength 5 4 Error vs Magnetic Field Streng...

Страница 2: ...cally when the appropriate power source is applied to the device There are three options for the reference voltage which depend on the state of two reference selection pins RSEL1 and RSEL0 as shown in...

Страница 3: ...can be applied to J1 pin 1 referenced to pin 3 If an external reference is used it is important to keep it at a level of VDD 2 which is the common mode point of the differential amplifier output stag...

Страница 4: ...modify the state of the reference voltage or device bandwidth during physical operation of the EVM resistors R3 through R8 can be removed and driven directly via GPIO pins on a microprocessor using f...

Страница 5: ...0 1000 1500 2000 2500 D001 www ti com EVM Operation 5 SLOU410B September 2015 Revised April 2020 Submit Documentation Feedback Copyright 2015 2020 Texas Instruments Incorporated DRV425 Evaluation Modu...

Страница 6: ...CERM 1 F 25 V 10 X7R 0603 Kemet C0603C105K3RACTU J1 Header 100mil 4x1 Gold R A TH Samtec TSW 104 08 G S RA R1 RES 100 1 0 125 W 0805 Vishay Dale CRCW0805100RFKEA R2 R9 RES 10 k 5 0 063 W 0402 Vishay...

Страница 7: ...Schematic and Bill of Materials 7 SLOU410B September 2015 Revised April 2020 Submit Documentation Feedback Copyright 2015 2020 Texas Instruments Incorporated DRV425 Evaluation Module Figure 6 DRV425EV...

Страница 8: ...ers in the current version Changes from A Revision October 2015 to B Revision Page Changed the FUNCTION column of Table 2 4 Changes from Original September 2015 to A Revision Page Deleted text The mag...

Страница 9: ...ther than TI b the nonconformity resulted from User s design specifications or instructions for such EVMs or improper system design or c User has not paid on time Testing and other quality control tec...

Страница 10: ...These limits are designed to provide reasonable protection against harmful interference in a residential installation This equipment generates uses and can radiate radio frequency energy and if not in...

Страница 11: ...instructions set forth by Radio Law of Japan which includes but is not limited to the instructions below with respect to EVMs which for the avoidance of doubt are stated strictly for convenience and s...

Страница 12: ...any interfaces electronic and or mechanical between the EVM and any human body are designed with suitable isolation and means to safely limit accessible leakage currents to minimize the risk of electr...

Страница 13: ...R DAMAGES ARE CLAIMED THE EXISTENCE OF MORE THAN ONE CLAIM SHALL NOT ENLARGE OR EXTEND THIS LIMIT 9 Return Policy Except as otherwise provided TI does not offer any refunds returns or exchanges Furthe...

Страница 14: ...e resources are subject to change without notice TI grants you permission to use these resources only for development of an application that uses the TI products described in the resource Other reprod...

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