Electrical characteristics
STM32L162VC, STM32L162RC
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DocID022881 Rev 10
Flash memory and data EEPROM
Table 36. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
1. Guaranteed by design.
Unit
V
DD
Operating voltage
Read / Write / Erase
-
1.65
-
3.6
V
t
prog
Programming/ erasing
time for byte / word /
double word / half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
I
DD
Average current during
the whole programming /
erase operation
T
A
=
25 °C, V
DD
= 3.6 V
-
600
900
µA
Maximum current (peak)
during the whole
programming / erase
operation
-
1.5
2.5
mA
Table 37. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min
(1)
1. Guaranteed by characterization results.
Typ Max
N
Cycling (erase / write)
Program memory
T
A
=
-40°C to
105 °C
10
-
-
kcycles
Cycling (erase / write)
EEPROM data memory
300
-
-
t
RET
(2)
2. Characterization is done according to JEDEC JESD22-A117.
Data retention (program memory) after
10 kcycles at T
A
= 85 °C
T
RET
= +85 °C
30
-
-
years
Data retention (EEPROM data memory)
after 300 kcycles at T
A
= 85 °C
30
-
-
Data retention (program memory) after
10 kcycles at T
A
= 105 °C
T
RET
= +105 °C
10
-
-
Data retention (EEPROM data memory)
after 300 kcycles at T
A
= 105 °C
10
-
-