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RM0365
Flexible static memory controller (FSMC)
286
The size of each bank is fixed and equal to 64 Mbytes. Each bank is configured through
dedicated registers (see
Section 14.5.6: NOR/PSRAM controller registers
The programmable memory parameters include access times (see
) and support
for wait management (for PSRAM and NOR Flash accessed in burst mode).
14.5.1
External memory interface signals
and
list the signals that are typically used to interface with NOR
Flash memory, SRAM and PSRAM.
Note:
The prefix “N” identifies the signals which are active low.
NOR Flash memory, non-multiplexed I/Os
The maximum capacity is 512 Mbits (26 address lines).
Table 47. Programmable NOR/PSRAM access parameters
Parameter Function Access
mode
Unit
Min.
Max.
Address
setup
Duration of the address
setup phase
Asynchronous
AHB clock cycle
(HCLK)
0
15
Address hold
Duration of the address hold
phase
Asynchronous,
muxed I/Os
AHB clock cycle
(HCLK)
1
15
Data setup
Duration of the data setup
phase
Asynchronous
AHB clock cycle
(HCLK)
1
256
Bust turn
Duration of the bus
turnaround phase
Asynchronous and
synchronous
read/write
AHB clock cycle
(HCLK)
0
15
Clock divide
ratio
Number of AHB clock cycles
(HCLK) to build one memory
clock cycle (CLK)
Synchronous
AHB clock cycle
(HCLK)
2
16
Data latency
Number of clock cycles to
issue to the memory before
the first data of the burst
Synchronous
Memory clock
cycle (CLK)
2
17
Table 48. Non-multiplexed I/O NOR Flash memory
FMC signal name
I/O
Function
CLK
O
Clock (for synchronous access)
A[25:0] O Address
bus
D[15:0]
I/O
Bidirectional data bus
NE[x]
O
Chip Select, x = 1..4
NOE
O Output
enable
NWE
O Write
enable
NL(=NADV)
O
Latch enable (this signal is called address
valid, NADV, by some NOR Flash devices)
NWAIT
I
NOR Flash wait input signal to the FMC