ST STEVAL-IHM017V1, Руководство пользователя

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STD5NK52ZD-1 characteristics UM0522
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5 STD5NK52ZD-1 characteristics
The STD5NK52ZD-1 is a n-channel Power MOSFET in the IPAK package (520 V - 1.22
Ω
-
4.4 A) Zener-protected, SuperMESH™.
Figure 3. STD5NK52ZD-1, package and internal schematic diagram
Stresses above the limit shown in Table 2 may cause permanent damage to the device.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 520 V
V
DGR
Drain-gate voltage (R
GS
= 20 k
Ω
) 520 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C 4.4 A
I
D
Drain current (continuous) at T
C
= 100°C 2.7 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 17.6 A
P
TOT
Total dissipation at T
C
= 25°C 70 W
3
2
1
IPAK
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