Sony KV-EF29N90, Руководство по обслуживанию

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KV-EF29N90
RM-882
KV-EF29N90
RM-882
KV-EF29N90
RM-882
KV-EF29N90
RM-882
KV-EF29N90
RM-882
– 53 – – 54 – – 55 – – 56 –
6-2. CIRCUIT BOARDS LOCATION
– 52 –
6-3. SCHEMATIC DIAGRAMS AND PRINTED WIRING BOARDS
G
D
S
B1 E1 C2
B2 C1 E2
2
3
4
5
6
7
8
9
0
!¡
!™
!¢
!§
!¶
!•
–
1
G
D
S
B2 E2 C1
B1 C2 E1
B2 E2 C1
B1 C2 E1
B2 E2 C1
B1 C2 E1
!ª
B1 E1
E2
C1(B2) C2
@º
B1 E2
C1 C2
@™
@£
(B2)
E1
(B2)
E1
E2 B1
C2 C1
@¡
B1
E1
C2
B2
C1
E2
G
S S
D
G
D
B1
E1
C2
B2
C1
E2
B1
E2
C2 C1(B2)
E2
B1
C1
C2 E1(B2)
C2
B1
C1
E2 E1(B2)
C2
B1
C1
E2
B2
E1
C2
Ver.1.5
Transistor
(FET)
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Transistor
Discrete semiconductot
(Chip semiconductors that are not actually used are included.)
Diode
Diode
Diode
Diode
Diode
Diode
Diode
Diode
Diode
Diode
Source
Source
Anode Anode
(NC)
(NC)
Cathode
Anode
Cathode
Common
Cathode Cathode
Common
Cathode Cathode
Common
Common
Common
Common
Cathode
Anode
Base Emitter
Collector
Base Emitter
Collector
Drain
Gate
Gate
Drain
Device Printed symbol Terminal name
Circuit
Terminal name of semiconductors in silk screen
printed circuit ( )
Anode
Anode
Anode Cathode
Anode Anode
Cathode
!£
Transistor
(FET)
Transistor
(FET) !∞
Emitter
Collector
Base
Transistor
Source
Gate
Drain
Cathode
Anode
Anode
Cathode
Anode
Anode
*
Note:
• All capacitors are in µF unless otherwise noted. (pF: µµF)
Capacitors without voltage indication are all 50 V.
•
Indication of resistance, which does not have one for rating
electrical power, is as follows.
Pitch: 5 mm
Rating electrical power 1/4 W (CHIP : 1/10 W)
• All resistors are in ohms.
•
f
: nonflammable resistor.
•
Ï
: fusible resistor.
• ¢ : internal component.
•
p
: panel designation, and adjustment for repair.
• All variable and adjustable resistors have characteristic curve B,
unless otherwise noted.
•
e
: earth-ground.
•
E
: earth-chassis.
• All voltages are in V.
• Readings are taken with a 10 M digital multimeter.
• Readings are taken with a color-bar signal input.
• Voltage variations may be noted due to normal production
tolerances.
• * : Can not be measured.
• NO MARK: PAL
• < > : SECAM
• ( ) : NTSC 3.58 MHz
• Circled numbers are waveform references.
•
s
: B + bus.
•
S
: B – bus.
•
÷
: Signal path.
Reference information
RESISTOR
: RN METAL FILM
: RC SOLID
: FPRD NONFLAMMABLE CARBON
: FUSE NONFLAMMABLE FUSIBLE
: RW NONFLAMMABLE WIREWOUND
: RS NONFLAMMABLE METAL OXIDE
: RB NONFLAMMABLE CEMENT
COIL : LF-8L MICRO INDUCTOR
CAPACITOR : TA TANTALUM
: PS STYROL
: PP POLYPROPYLENE
: PT MYLAR
: MPS METALIZED POLYESTER
: MPP METALIZED POLYPROPYLENE
: ALB BIPOLAR
: ALT HIGH TEMPERATURE
: ALR HIGH RIPPLE
Note: The components identified by shading and mark
! are critical for safety. Replace only with part
number specified.
— A BOARD —
A
MICON, YC/J,
AV SW
• A BOARD SEMICONDUCTOR LOCATION
DIODE
*
D001 C–8
D002 C–10
3
D005 E–9
D101 A–7
D102 A–7
D103 A–3 3
D104 C–7 8
D105 C–7 3
D106 B–7 4
D107 C–6
4
D110 A–7
3
D111 B–7
D112 D–6 4
D117 C–6 4
D118 C–7
D210 E–8
D211 E–6 3
D212 E–7
3
D218 E–6
8
D220 E–7
D301 A–7 3
D303 B–7 8
D352 B–6
D353 B–6
D1201 C–1
D1202 C–1
D1203 C–1
D1204 C–2
D1205 C–1
D1208 B–1
D1209 B–1
D1210 B–1
D1211 C–1
D1212 C–1
D1213 C–1
D1214 D–1
D1215 D–1
D1216 D–1
D1217 D–1
D1218 D–1
D1219 D–1
D1220 C–3
CRYSTAL
X101 B–10
X102 C–5
X104 D–6
* : Refer to Terminal name of semiconductors in silk
screen printed circuit (see page 53)
IC
IC001 B–9
IC002 C–8
IC003 C–9
IC010 E–9
IC080 E–2
IC102 D–10
IC104 C–6
IC201 D–9
IC203 E–6
IC205 C–4
IC206 B–5
IC301 D–2
IC302 D–3
IC351 B–6
IC1201 C–3
IC1202 C–2
TRANSISTOR
*
Q001 A–8 1
Q030 C–10 1
Q031 A–7 1
Q033 A–9 1
Q105 E–6
1
Q106 D–6
1
Q107 D–5 1
Q108 C–7 1
Q111 C–6 1
Q112 A–7 1
Q113 C–6 1
Q205 E–6 1
Q208 E–6 1
Q209 E–6
1
Q210 E–6
1
Q211 E–8 1
Q302 D–3 1
Q304 E–5 1
Q320 E–3 1
Q352 D–3 1
Q354 C–3 1
Q1201 B–3
1
Q1202 B–3
1
Q1203 C–3 1
Q1204 B–2 1
Q1205 C–2 1
Q1206 C–2 1
Q1207 D–1 1
Q1208 D–2 1
Q1209 D–2
1
H7
B3
S1
C1
VM
A5
P3
P4
A4
J
A
D2
D