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SIM900E Document     

                                                                                                                                                     

 

- 5 - 

2.

 

Detail Block Diagram 

 

Figure 4: Block diagram of SIM900E 

 

 
 

3.

 

Electrical and Reliability Characteristics 

3.1.

 

Absolute Maximum Ratings 

The absolute maximum ratings stated in following table are stress ratings under non-operating conditions. Stresses 
beyond any of these limits will cause permanent damage to SIM900E . 
 

Table 1: Absolute maximum ratings 

Symbol 

Parameter 

Min 

Typ 

Max 

Unit 

VBAT 

Power supply voltage 

- 

- 

5.5 

V 

V

I

*

 

Input voltage 

-0.3 

- 

3.1 

V 

I

I

*

 

Input current 

- 

- 

10 

mA 

I

O

*

 

Output current 

- 

- 

10 

mA 

*

These parameters are for digital interface pins, such as keypad, GPIO, I

2

C, UART, LCD and DEBUG. 

Содержание SIM900E

Страница 1: ...176 and Flash etc 1 2 Feature Quad band 900 1800 850 1900MHz GPRS multi slot class 10 8 GPRS mobile station class B Compliant to GSM phase 2 2 Class 4 2W at GSM 850 and EGSM 900 Class 1 1W at DCS 1800...

Страница 2: ...PIO8 KBC2 IO 12 SIM_RST I 46 GPIO1 KBR4 IO 13 SIM_VDD O 47 GPIO9 KBC1 IO 14 STATUS O 48 GPIO6 KBC4 IO 15 NRESET I 49 GPIO7 KBC3 IO 16 RXD I 50 GPIO5 KBR0 IO 17 TXD O 51 GPIO4 KBR1 IO 18 GND 52 GPIO2 K...

Страница 3: ...SIM900E Document 3 1 4 Pictures Figure 1 Top view of SIM900E Figure 2 Bottom view of SIM900E...

Страница 4: ...SIM900E Document 4 1 5 Dimension Figure 3 Dimention...

Страница 5: ...g table are stress ratings under non operating conditions Stresses beyond any of these limits will cause permanent damage to SIM900E Table 1 Absolute maximum ratings Symbol Parameter Min Typ Max Unit...

Страница 6: ...interface pins such as keypad GPIO I2 C UART LCDand DEBUG 3 3 SIM Card Interface Characteristics Table 3 SIM card interface characteristics Symbol Parameter Min Typ Max Unit IIH High level input curr...

Страница 7: ...Value Unit IVRTC VRTC current VBAT disconnects Backup battery is 3 V 2 uA IVBAT VBAT current Power down mode 30 uA Sleep mode BS PA MFRMS 9 1 0 mA BS PA MFRMS 5 1 2 BS PA MFRMS 2 1 5 Idle mode GSM 85...

Страница 8: ...be paid to the procedure of handling and packaging The ESD test results are shown in the following table Table 7 The ESD characteristics Temperature 25 Humidity 45 Pin Contact discharge Air discharge...

Страница 9: ...ower GSM850 and EGSM900 PCL Nominal output power dBm Tolerance dB for conditions Normal Extreme 5 33 3 4 6 31 3 4 7 29 3 4 8 27 3 4 9 25 3 4 10 23 3 4 11 21 3 4 12 19 3 4 13 17 3 4 14 15 3 4 15 13 3 4...

Страница 10: ...er level the output power tolerance should not exceed 2dB under normal condition and 2 5dB under extreme condition 4 2 Module RF Receive Sensitivity The following table shows the module s conducted re...

Страница 11: ...terial used trace width W trace thickness T and height H between the trace and the reference ground plane In order to respect this constraint SIMCom recommends that a MicroStrip structure be used and...

Страница 12: ...clearance G below from the trace to the ground should be at least the trace width W and at least twice the height H This reduces the parasitic capacitance which potentially alters the trace impedance...

Страница 13: ...afety hazard Your cellular terminal or mobile receives and transmits radio frequency energy while switched on RF interference can occur if it is used close to TV sets radios computers or other electri...

Страница 14: ...em is incorporated with a statement similar to the following a For SIM900E This device contains FCC ID UDV SIM900E A user manual with the end product must clearly indicate the operating requirements a...

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