Resistor value and power rating for R10, R11,
R12 are depended on switching frequency and
gate loading of the IGBT/MOSFET device
JP6
JP7
JP8
Q2
FDT3612
R10
15
GNDA
TPV12
CLMP
C19
0.1uF
Q3
MMBT2222LT1
R27
NI
R15
0.1
VH
VL
CLMP
R16
10.0
R9
10K
VSSB
JP4
VSSB
D4
5.6V
JP5
JP9
DSAT Disable
R13
0
TPV9
DSAT
C7
10uF
C8
0.1uF
R19
0
NI
R8
10K
J6
RST
1
J7
FLT
1
R14
15K
J9
IN+
1
J10
IN -
1
J4
NI
1
2
3
4
5
6
7
8
9
10
111315
121416
J5
NI
1
2
3
4
5
6
7
8
9
10
111315
121416
VDDP
Prototyping area
ISOLA
TION
U2
Si8284CD- IS
VDDA
4
VH
19
CLMP
17
RSN
2
GNDP
1
NC
22
ESW
3
DSAT
21
VSNS
24
SS
6
GNDA
7
VDDB
20
SH/FC
5
RST
8
COMP
23
VL
18
FLT
9
RDY
10
VMID
16
VSSB
15
IN+
11
IN -
12
VSSB
13
NC
14
R3
100K
C10
1.5nF
R2
8.66K
R1
182K
J8
RDY
1
C3
10uF
C5
10uF
SH
C22
10uF
C9
0.1uF
C4
0.1uF
C6
0.1uF
VL
VH
CLMP
D3
ES1F
C16
390pF
DSAT
SH
D1
B160
D2
B160
R12
1.0
R5
100
C2
100pF
R21
10K
VDDB
VDDB
VMID
VSSB
VSSB
VPWR
D7
RED
VSSB
VPWR
R25
10K
C24
0.01uF
D8
RED
VDDB
R26
10K
1. DC/DC is built to drive gate to +15/ -9V
2. To operate with positive gate drive only:
a. Remove R13
b. Install R19 = 0 Ohm
c. Change divider VDDB-VSSB = (R1/R2 + 1) x 1.05V
VDDB
C23
0.22uF
R20
18.7K
VDDB
VMID
R22
10K
R23
10K
C12
10uF
C13
0.1uF
R11
10
VDDA
R4
100
C15
0.1uF
J11
SH
1
C14
10uF
Aux. VDDP to 5V VDDA circuit
These components can be
removed if a 5V source is
available to connect to VDDA
directly.
R14 = (VDDP -5.6 )/0.001
R6
10K
TO-247 pinout place holder
DSAT
VMID
R24
10K
Q1
NI
D6
RED
VDDP
D5
RED
VDDA
VPWR
R18
100
C20
100pF
VDDB
+IN/-IN have weak internal pull down
(4uA).
Signal sources should be placed as close
as possible to +IN/-IN inputs to minimize
noise coupling.
+IN and -IN should be terminated directly
to VDDA/GNDA accordingly if not used.
VDDA
VDDP
VDDP = 12V to 24V
VDDP
VDDA
TPV8
IGBT_GATE
VSSB
TPV10
MOSFET_D
VSSB
TPV11
MOSFET_G
T2
25uH
2
8
6
5
3
7
1
4
VMID
D9
NI
Figure 2.2. Si8284 Circuit Schematic
UG168: Si8284-EVB User's Guide
Schematics
silabs.com
| Smart. Connected. Energy-friendly.
Rev. 0.1 | 4
