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2.  Guidelines for Layout Design When Using EFR32 Wireless MCUs

Some general guidelines for designing RF-related layouts for good RF performance are:

• For custom designs, use the same number of PCB layers as are present in the reference design whenever possible. Deviation from

the reference PCB layer count can cause different PCB parasitic capacitances, which can detune the matching network from its opti-
mal form. If a design with a different number of layers than the reference design is necessary, make sure that the distance between
the top layer and the first inner layer is similar to that found in the reference design, because this distance determines the parasitic
capacitance value to ground. Otherwise, detuning of the matching network is possible, and fine tuning of the component values may
be required.

• Use as much continuous and unified ground plane metallization as possible, especially on the top and bottom layers.
• Avoid the separation of the ground plane metallization, especially between the ground of the matching network and the RFIC GND

pins / exposed pad.

• Use as many grounding vias (especially near the GND pins) as possible to minimize series parasitic inductance between the ground

pours of different layers and between the GND pins.

• Use a series of GND stitching vias along the PCB edges and internal GND metal pouring edges. The maximum distance between

the vias should be less than lambda/10 of the 10

th

 harmonic (the typical distance between vias on reference radio boards is 40–50

mil). This distance is required to reduce the PCB radiation at higher harmonics caused by the fringing field of these edges.

• For designs with more than two layers, it is recommended to put as many traces (even the digital traces) as possible in an inner

layer and ensure large, continuous GND pours on the top and bottom layers.

• Avoid using long and/or thin transmission lines to connect the RF related components. Otherwise, due to their distributed parasitic

inductance, some detuning effects can occur. Also shorten the interconnection lines as much as possible to reduce the parallel para-
sitic caps to the ground. However, couplings between neighbor discretes may increase in this way.

• To reduce the coupling between the nearby discrete inductors, avoid placing them in the same orientation.
• Use tapered line between transmission lines with different width (i.e., different impedance) to reduce internal reflections.
• Avoid using loops and long wires to obviate their resonances. They also work well as unwanted radiators, especially at the harmon-

ics.

• Always ensure good V

DD

 filtering by using some bypass capacitors (especially at the range of the operating frequency). The series

self-resonance of the capacitor should be close to the filtered frequency. The bypass capacitor which filters the highest frequency
should be placed closest to the V

DD

 pins of the EFR32. In addition to the fundamental frequency, the crystal/clock frequency and its

harmonics (up to the 3

rd

) should be filtered to avoid up-converted spurs.

• Connect the crystal case to the ground using many vias to avoid radiation of the ungrounded parts. Do not leave any metal uncon-

nected and floating that may be an unwanted radiator. Avoid leading supply traces close or beneath the crystal or parallel with a
crystal signal or clock trace.

• Place the RF related parts (especially the antenna) far away from the DC-DC converter output and the related DC-DC components.
• Avoid routing GPIO lines close or beneath the RF lines, antenna or crystal, or in parallel with a crystal signal. Use the lowest slew

rate possible on GPIO lines to decrease crosstalk to RF or crystal signals.

• Use as short V

DD

 traces as possible. The V

DD

 trace can be a hidden, unwanted radiator so it is important to simplify the V

DD

 routing

as much as possible and use large, continuous GND pours with many stitching vias. To achieve the simplified V

DD

 routing, try to

avoid star topology of V

DD

 traces (i.e., avoid connecting all V

DD

 traces in one common point).

• Using silkscreen near the antenna could slightly affect the dielectric environment of the antenna. Although this effect is usually negli-

gible, if possible, try to avoid using silkscreen on the antenna or on the antenna copper pour keep out areas.

AN928.1: EFR32 Series 1 Layout Design Guide

Guidelines for Layout Design When Using EFR32 Wireless MCUs

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Содержание EFR32 1 Series

Страница 1: ...d debug environment In order to take advantage of the capabilities and features on custom hardware Silicon Labs recommends including debugging and programming interface connector s in custom hardware designs The details and ben efits of including these connector interfaces are detailed in AN958 Debugging and Pro gramming Interfaces for Custom Designs The power configurations and the proper usage o...

Страница 2: ... and it is strongly recommended to use the same framed RF layout in order to avoid any possibility of detuning effects The figure below shows the framed compact RF part of the designs Figure 1 1 Top Layer of the Radio Board Left Side and Assembly Drawing of the RF Part Right Side The layout of the MCU VDD filtering capacitors should also be copied from the reference design as much as possible When...

Страница 3: ... of harmonic signals Since most regulatory standards e g FCC ETSI ARIB etc require the harmonic signals to be attenu ated below some absolute power level in watts or dBm the amount of low pass filtering required is generally greater on an RF radio board using an EFR32 that was designed for higher output power In the figure above there is an additional component R1 beside the 4 element matching whi...

Страница 4: ...he correct matching network information refer to the datasheet and reference designs The sub GHz EFR32 Series 1 wireless MCU can provide maximum 19 5 dBm power All sub GHz EFR32 matching network consist of the following sections impedance transformation circuit differential to single ended balun and low pass filter For further details on the sub GHz matching network principles refer to the applica...

Страница 5: ... sitic caps to the ground However couplings between neighbor discretes may increase in this way To reduce the coupling between the nearby discrete inductors avoid placing them in the same orientation Use tapered line between transmission lines with different width i e different impedance to reduce internal reflections Avoid using loops and long wires to obviate their resonances They also work well...

Страница 6: ...practices should be applied with a 2 element matching network as well Most of the layout guidelines in this section are general and should be applied in the sub GHz layout design as well The layout structure for the RF part of the EFR32 Series 1 Dual band Reference Radio Board is shown in the figure below the 2 4 GHz matching is highlighted by a blue frame Figure 2 1 Layout of the RF Section for t...

Страница 7: ...ation between traces pads to the adjacent GND pour in the areas of the matching networks This techni que will minimize the parasitic capacitance and reduce the detuning effects If space allows the nearby inductors of the matching network should be kept perpendicular to each other to reduce coupling be tween stages This helps to improve filter attenuation at higher harmonic frequencies The series m...

Страница 8: ...crystal and VDD traces to avoid any detuning effects on the crystal caused by the nearby power supply and to avoid the leakage of the crystal clk signal and its harmonics to the supply lines Figure 2 3 EFR32 Series 1 Layout Design Rules Dual band Reference Layout Top and Inner Layer 1 Use as many parallel grounding vias at the GND metal edges as possible especially at the edge of the PCB and along...

Страница 9: ...nes on inner layers for boards with more than two layers Avoid placing the supply lines close to the PCB edge To reduce sensitivity to PCB thickness variations use 50 Ω grounded coplanar lines where possible for connecting the antenna or the U FL connector to the matching network This also reduces radiation and coupling effects A general rule is to use 50 Ω trans mission lines where the length of ...

Страница 10: ...T 0 018 0 035 mm εr 4 6 H 0 325 mm G 0 25 mm W 0 45 mm Notes 1 Characteristic impedance is not super sensitive to the gap value It should be between 0 25 and 0 4 mm to have 47 through 53 Ω impedance 2 Different impedance calculators may yield slightly different results 3 H is the distance between the top and the first inner layer Figure 2 7 Grounded Coplanar Line Parameters AN928 1 EFR32 Series 1 ...

Страница 11: ...t uses a 915 MHz matching similar design practices should be applied with matching networks for other sub GHz frequencies as well The layout structure for the RF part of the EFR32 Series 1 Dual band Reference Radio Board is shown in the figure below the sub GHz matching is highlighted by a blue frame Figure 2 8 Layout of the RF Section for the EFR32 Series 1 Dual band Reference Radio Board sub GHz...

Страница 12: ...e chip As a result the first TX matching network components can be connected only with relatively long traces No traces should be routed on the layer beneath the traces that connects the first TX matching components with TX pins It is recommended to add an isolating ground metal with many vias between the 2 4 GHz and sub GHz matching networks The following figures illustrate layer consistency arou...

Страница 13: ...tching Area on the EFR32 Series 1 Dual band Reference Layout Bottom layer AN928 1 EFR32 Series 1 Layout Design Guide Guidelines for Layout Design When Using EFR32 Wireless MCUs silabs com Building a more connected world Rev 0 5 13 ...

Страница 14: ...und metal exist between the crystal and the RFVDD feed 7 Are the smallest value VDD filtering ca pacitors kept as close as possible to the VDD pins RFVDD PAVDD VREGVDD AVDD DVDD IOVDD of the EFR32 8 Are there multiple thermal straps used with the shunt capacitors 9 Do the ground pins of the shunt capaci tors use multiple vias 10 Does the exposed pad footprint use mul tiple vias 11 Is there at leas...

Страница 15: ...ND metal edges closed by stitching vias where possible with a via distance less than lambda 10 of the highest usually 10th critical harmonic frequency 17 Are 50 Ω grounded coplanar lines used for RF traces longer than λ 16 at the fun damental frequency 18 Are there vias at the ground metalliza tion near the 50 Ω transmission lines 19 Are the RF related parts especially the antenna placed far away ...

Страница 16: ...harmonic filtering capaci tors connected to ground planes on dif ferent sides of the transmission line 22 Is the area on the first inner layer be neath the RF chip and the matching net work filled with continuous GND metal and was wiring and routing avoided in this region AN928 1 EFR32 Series 1 Layout Design Guide Checklists silabs com Building a more connected world Rev 0 5 16 ...

Страница 17: ...ied on all inner layers beneath the area of the RX matching network 26 Is the area on the first inner layer be neath the balun and low pass filter filled with continuous GND metal and was wiring and routing avoided in this re gion 27 Is wiring and routing avoided on the lay er beneath the traces that connect the first TX matching network components with TX pins AN928 1 EFR32 Series 1 Layout Design...

Страница 18: ...ts The products are not designed or authorized to be used within any FDA Class III devices applications for which FDA premarket approval is required or Life Support Systems without the specific written consent of Silicon Labs A Life Support System is any product or system intended to support or sustain life and or health which if it fails can be reasonably expected to result in significant persona...

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