Sharp SD-NX10W, Руководство по обслуживанию

Страница: 75 / 112

– 75 –
SD-NX10W
WAVEFORMS OF 1-BIT CIRCUIT
T
2
1
2.00 V/div
500 ns/div 194.545465
µ
s 520 mV
2.00 V/div
AD IC Output
+ Side
- Side
5 V
Amplitude
from 0 to 5 V
1
2
2
1
2.00 V/div
500 ns/div 194.545465
µ
s -12.30 V
2.00 V/div
AD IC NF IN
In partial pressure OUT, 4 to 7 V amplitude
of GND reference is observed.
In IC of 75 kohms, the reference is 2.5 V
because of VREF. Due to imaginary GND
of operational amplifier inside IC, the
waveform cannot be monitored.
This waveform is partial pressure OUT.
3
4
T
2.00 V/div
50.0 ns/div 0.0 s -12.30 V
2.00 V/div
LEVEL SHIFT OUT
DEAD TIME
ZOOM UP
Dead time is generated by level
shift input.
Leading edge is delayed at CR,
passing R at DI.
Set value: 20 -25 nsec
5
6
T
2.00 V/div
500 ns/div 194.545465
µ
s -12.47 V
2.00 V/div
| @ POWER SUPPLY
LEVEL SHIFT OUT
5 V
Waveform after level shift
On the reference side, 5 V amplitude
is observed at + 2 V (negative supply
voltage), corresponding to VINH and
VINL of gate driver during 9 V operation.
(Approx. 0.8 VCC and 0.2 VSS)
7
8
FET is based on the negative
supply voltage; the gate voltage
of the LOW side FET operates
with the negative power and + 9 V. To make HIGH SIDE FET
completely on, the positive
supply voltage of + 4.5 V or over
is required. At the bootstrap, the
gate drive voltage is generated;
the HIGH side is driven between
(positive power) + 6 V and the
negative power.
T
2
1
10.0 V/div
500 ns/div 194.545465
µ
s -12.3 V
10.0 V/div
HIGH SIDE OUT
LOW SIDE OUT
GATE DRIVE OUT
9
10
T
10.0 V/div
500 ns/div 194.545465
µ
s -12.3 V
10.0 V/div
+SIDE
+FETOUT
- SIDE
Waveforms before low-pass filters at both
ends of the speaker
H-bridge may be considered as BTL.
However, here and at the gate drive, dead
time is not observed; since bootstrap
operates based on output, DEAD TIME
part is in floating condition. The waveform
on the HI GH side shows that only the
booted voltage lowers.
2
1
11
12