
Alignment and Adjustments
4-4
Samsung Electronics
The PWM duty which is outputed from HVQ01 is variable according to Beam current of high woltage. In
case high voltage goes up(or down) due to change of Beam Current, PWM duty will be decreased9or
increased). This pules which is inputed to QH406 Gate(FBT) will be turn on between source and will be
charge energy in primary of storage trans(TD402S) and then will be charge energy in primary of storage trans
during trace perido. This energy is variable according to pluse duty, and will be inducted to secondary of
TD402S. The inducted energy will be added to basic high voltage generation pulse in FBT(T444S). As a
result, high voltage will be regulated by this method.
3)F/S circuit description
In case high voltage goes up, consequently detected voltage will be goes up and this voltage will be divided
regularly through R432, R433, R434, RR400S R and R441.
1
6
9
5
11
2
+ B INPUT
FBT
T444S
CR411S
C472
QH405
CR410S CR409S
D410
TS13
R486
L481
R449
DZ400
L403
TD402S
HIGH VOLTAGE
OUTPUT
QH406
G
D
S
H-DRIVE
R
r
X
11
T44S
ANODE
R1
C480
R432 R433 R434 R437
RR400S
R441
HVR20
HVIC02 1 PIN
TL494CN
HV-REG.
D411
HVIC03
TL431
F/S
R430
RR401S
HIGH VOLTAGE
CHECK VOLTAGE
X-ray Test pin
This divided voltage will be inputed to HVIC03 pin #R, and then in this case voltage goes up more than 2.95v,
Between pin #K and pin #A of HVIC03 will be turn on and will be decreased Base voltage of HVQ02, and
then E-C of HVQ02 will be turn on and will be detected high level voltage by R482.
Its value will be inputed HVIC02 PIN #4(X-ray detect), and high voltage oscillation will be OFF in order to
protect X-ray. In this case, high voltage will be On if power is re-ON.
HVC03
HVR01
+ 12V
K
A
A
R
F/S DETECTOR
HVIC03(L431)
X-ray
HVIC02
HVQ02
HVR08
HVD01
TS14
HVDZ02
HVR25
HVC02
HVR13
Содержание TSL3099WF/XAA
Страница 11: ...3 2 Samsung Electronics MEMO ...
Страница 29: ...5 6 Samsung Electronics MEMO ...
Страница 46: ...7 16 Samsung Electronics MEMO ...
Страница 49: ...Block Diagrams 8 4 Samsung Electronics 8 4 DEFIECTION BLOCK ...
Страница 50: ...Samsung Electronics Block Diagrams 8 5 8 5 PCB LAYOUT ...
Страница 51: ...Block Diagrams 8 6 Samsung Electronics 8 6 FEATURE BOX ...
Страница 52: ...Samsung Electronics Block Diagrams 8 7 8 7 VIDEO FLOW ...
Страница 53: ...Block Diagrams 8 8 Samsung Electronics 8 8 SOUND FLOW ...
Страница 56: ...Samsung Electronics Schematic Diagrams 9 3 TP22 TP23 TP24 TP25 9 2 MAIN 2 TP22 TP23 TP24 TP25 ...
Страница 57: ...Schematic Diagrams 9 4 Samsung Electronics 9 3 MAIN 3 ...
Страница 58: ...Samsung Electronics Schematic Diagrams 9 5 9 4 MICOM SIDE AV TP26 TP27 TP26 TP27 SIDE AV MICOM ...
Страница 59: ...Schematic Diagrams 9 6 Samsung Electronics 9 5 POWER TP28 TP29 TP30 TP28 TP29 TP30 ...
Страница 60: ...Samsung Electronics Schematic Diagrams 9 7 9 6 POWER 2 TP37 TP36 TP31 TP35 TP32 TP33 TP34 TP38 TP39 ...
Страница 62: ...Samsung Electronics Schematic Diagrams 9 9 9 7 CRT DTV JACK CRT DTV JACK ...
Страница 63: ...Schematic Diagrams 9 10 Samsung Electronics 9 8 DOLBY SOUND ...
Страница 64: ...Samsung Electronics Schematic Diagrams 9 11 9 9 3D COMB ...
Страница 65: ...Schematic Diagrams 9 12 Samsung Electronics 9 10 FEATURE BOX 1 4 ...
Страница 66: ...Samsung Electronics Schematic Diagrams 9 13 9 11 FEATURE BOX 2 4 ...
Страница 67: ...Schematic Diagrams 9 14 Samsung Electronics 9 12 FEATURE BOX 3 4 ...
Страница 68: ...Samsung Electronics Schematic Diagrams 9 15 9 13 FEATURE 4 ...
Страница 69: ...9 14 HV MODULE TACK SWITCH Schematic Diagrams 9 16 Samsung Electronics TACK SWITCH HV MODULE ...
Страница 70: ...Samsung Electronics 9 15 SUB PCB 2 SUB POWER CONTROL Schematic Diagrams 9 17 CONTROL SUB POWER ...
Страница 71: ...ELECTRONICS Samsung Electronics Co Ltd AUG 2000 Printed in Korea 3KS4A N 2901 ...