Samsung
Confidential
Samsung
Confidential
Samsung
Confidential
SRP Sheet Number: 27 of 78
3 / 4
RSVD
THERMAL
H CLK
XDP/ITP SIGNALS
1
PSI2*
DPRSLPVR
B
ELECTRONICS
1
0
0
1
1
1
1
1
1
EXCEPT AS AUTHORIZED BY SAMSUNG.
1
1
1
1
1
1
1
1
D
1
1
3
0
1
0
0
0
0
0
0.5000 V
1
1
1
1
0
1
0
1
1
1
1
1
0
0
DPRSTP*
Deeper Slp
0 or 1
1
PROPRIETARY INFORMATION THAT IS
1
1
0.0000 V
0.0000 V
0.0000 V
1
1
C
1
1
1
1
1
1
1
1
1
1
1
1
1
1.0875 V
0
1
0
Dual Mode Region
Deeper Sleep/Extended Deeper Sleep
*"1111111" : 0V power good asserted.
ITP DISABLE
0.0000 V
1
C
1
1
1
0.1500 V
0
0
1
1
1
1
1
1
0
1
0
1
1
1
1
1
1
1
1
1
0
1
1
0
4
0.0000 V
0.0000 V
0.0000 V
1
1
1
1
1
1
1
0
1
0
0
VID(6:0)
1
1
1
1
1
1
1
1
D
SAMSUNG ELECTRONICS CO’S PROPERTY.
0
1
1.0750 V
1.0625 V
1.0500 V
1.0375 V
1
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
SAMSUNG
2
THIS DOCUMENT CONTAINS CONFIDENTIAL
1
1
1
1
1
0
0
0
0
0.3250 V
0.3125 V
0.3000 V
1
0.4250 V
0.4125 V
1
1
1
1
0
Active Mode
Dual Mode Region
Active/Deeper Sleep
1
1
1
1
0
1
SAMSUNG PROPRIETARY
A
4
3
1
1
1
0
0
1
1
0
1
1
1
0
1
0
1
1
1
1
1
0
0
0
0
1.0250 V
1
1
1
2
1
1
1
0
0
1
0.3750 V
0.3625 V
1
1
0
0.4375 V
1
1
1
1
1
1
0
0
0.2875 V
0.2750 V
0.2625 V
0.1375 V
0.2500 V
0.2000 V
1
1
1
0
A
1
0
0
0
0
1
1
1
1
1
1
1
1
1
1
0
1
0.0875 V
1
0
0
0
1
0
1
1
0
1.0125 V
1.1000 V
1.1125 V
1
1
0
0
0
1
1
0
0
0
0
0
0
1
0
0
0.3500 V
Voltage
0
1
1
0
1
1
0
0
0
0
0.1875 V
1
1
1
0
0
0.2375 V
0.2250 V
0.2125 V
0
0
1
1
1
0
1
1
1
0
1
1
1
0
1
0.0750 V
0.0625 V
0.0500 V
0.0000 V
0.0375 V
0.0250 V
0.0125 V
0
1
0
0
0
0 or 1
0
0
0
1
0
0.4000 V
0.3875 V
0
0
0
1
0
0
1
0.8000 V
1
0
0
0
1
0
0
0
1
1
1
0
1
0.1750 V
0.1625 V
0.1250 V
1
1
1
1
0
0
1
1
0
0
1
1
1
1
1
1
0
1
1
0
1
0
0
1
0
1
0
1
0
1
1
1
0
1
0
0
0
0.4500 V
0
0
0
1
0
0
0
1
0
1
0
0
0
0
1
0
1
1
1
1
1
1
0
1
1
1
0.1125 V
0.1000 V
1
0
0
1
0
1
1
1
0
0.6000 V
0.5875 V
0
0.5625 V
0.5125 V
1
1
0
1
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0.4750 V
0.4625 V
0.3375 V
1
0
0
0
0
0
1
1
0
0
0
0.7875 V
0.7750 V
0.6500 V
0.7625 V
0
0
0
0
0
0
0
1
0
0
1
0
0
0
1
1
1
0
0
0
0
1
0
1
1
0.5750 V
1
0
1
0
1
1
1
0
0
0
0
0
0
1
0
1
0
1
0
0
0
0
1
0
0
1
Voltage
0
0
1
1
1
0
0
0
1
1
0
0.7125 V
0.7000 V
0.6875 V
0.6750 V
0.6375 V
0.6250 V
0.6125 V
0.7500 V
0
0
0
0
1
1
1
1
0
0
0
1
1
0
1
1
0
0
1
0
0.5500 V
0.5375 V
0.5250 V
1
0
0
0
0
0
0
1
1
1
1
1
0
0
0.4875 V
0
0
0
1
0
0
1
1
0
0
0
0
0
0
1
1
0
0
0
1
0
1
1
0
0
1
0.7375 V
0
1
1
1
1
0
1
1
0
1
1
1
0
1
1
1
0
1
1
1
0
1
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
1
1
0
0
0.9250 V
0.8625 V
0
0
1.1750 V
1.1375 V
1.1250 V
0
1.2375 V
1.2250 V
0
0
0
1
0
0
1
1
1
1
1
1
1
0.7250 V
0.6625 V
1
1
1
0
1
0
0
1
0
1
1
1
1
1
1
0
0
1
1
0
0
1
0
1
1
1.0000 V
0.9875 V
0.9750 V
0.8500 V
1
0
0
1
0
0
1
VID(6:0)
0
0.9375 V
0
1
1.2000 V
1.1875 V
1
1
0
1.2500 V
1
1
0
0
0
0
1
1
0
0
0
0
1
0
1
1
0
0
1
1
1
0
1
0
0
0
1
1
0
0
0
0
0
0
1
1
0
0
1
1
1
0
0
0
1
0
0.9625 V
1
1
1
0
0
0.8250 V
0.8125 V
0.9500 V
1
0
0
1
0
1
1
0
0
0
0
1.1625 V
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
0
1
1
0
0
IMVP-6
1
1
0
0
1
0
1
0
1
0
1
0
1
0
0
0
0
0
0
0
*Yonah Processor (2.33 GHz / 800 MHz : TBD)
0
1
0.9125 V
0.9000 V
0.8875 V
1
1
1
1
1
0
1.2625 V
1.2125 V
0
0
1
1
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
0
DPRSTP*
Active
1
0
1
1
0
1
0
1
0
1
1
0
0
0
0
0
1
1
0
1
0
1
0
0
0
0
0
0.8750 V
0.8375 V
0
0
0
1.1500 V
0
0
0
0
0
0
1
0
Minimize coupling of any switching signals to this net.
GTLREF : Keep the Voltage divider within 0.5"
1
1
1
1
1
0
1
0
0
0
1
1
0
0
0
0
1
1
1
1
1
0
0
0
0
0
1
0
0
1
0
0
1
1
1.5000 V
1.4875 V
0
0
VID(6:0)
1
1
1
1
1
1
0
0
0
1
1
1.3000 V
1.2875 V
1.2750 V
1
1
1
1.4250 V
1.3625 V
1
1
CPU Core Voltage Table
0
0
1
1
0
0
0
1
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
DPRSLPVR
1
0
1
1
1.4000 V
1.3875 V
1.3750 V
1
0
0
1
0
0
0
1.4750 V
1.3500 V
1.4625 V
1.4125 V
1
1
1
0
0
0
1
1
0
0
1
0
1
1
1
1
0
0
1
1
1.3250 V
PSI2*
Route the VCC/VSSsense as a Zo=55ohm traces with equal length.
Observe 3:1 spacing b/w VCC/VSSsense lines and 25mil away
of the first GTLREF0 pin with Zo=55ohm trace.
COMP0,2(COMP1,3) should be connected with Zo=27.4ohm(55ohm)
trace shorter than 1/2" to their respective Banias socket pins.
GND test points within 100mil of the VCC/VSSsense at the end of the line.
0
0
0
0
0
0
0
0
0
0
0
1
0
1
0
1
0
0
0
0
1
0
1
1
1.3375 V
1
1
0
1
0
1
1
1
0
1
0
1
1
Voltage
0
0
1.3125 V
1.4500 V
1.4375 V
(preferred 50mil) from any other signal. And GND via 100mil away
from each of the VCC/VSS test point vias.
0
0
0
0
27.4
1%
R695
C678
100nF
C645
100nF
6.3V
16V
C716
10nF
C715
10000nF
100nF
C681
0
R698
2K
P1.05V
1%
56.2
R694
1%
P1.05V
AD
2.5V
220uF
EC502
P1.05V
1%
150
R612
nostuff
1K
1%
R692
nostuff
VID_6
AE2
VSSSENSE
AE7
R699
0
nostuff
R6
VCCP_6
K21
VCCP_7
J21
VCCP_8
M21
VCCP_9
VCCSENSE
AF7
VID_0
AD6
AF5
VID_1
VID_2
AE5
VID_3
AF4
VID_4
AE3
VID_5
AF3
VCCP_10
T21
VCCP_11
R21
VCCP_12
V21
VCCP_13
W21
VCCP_14
V6
VCCP_15
G21
VCCP_16
J6
VCCP_2
M6
VCCP_3
N6
VCCP_4
T6
VCCP_5
A26
TEST6
TEST7
C3
THERMTRIP#
C7
THRMDA
A24
THRMDC
B25
AB5
TMS
AB6
TRST#
B26
VCCA_1
C26
VCCA_2
K6
VCCP_1
N21
RSVD_8
D3
RSVD_9
F6
SLP#
D7
AC5
TCK
AA6
TDI
AB3
TDO
C23
TEST1
D25
TEST2
C24
TEST3
AF26
TEST4
AF1
TEST5
PREQ#
PROCHOT#
D21
PSI#
AE6
PWRGOOD
D6
RSVD_1
M4
RSVD_2
N5
RSVD_3
T2
RSVD_4
V3
RSVD_5
B2
RSVD_6
D2
RSVD_7
D22
R26
COMP0
COMP1
U26
COMP2
AA1
COMP3
Y1
C20
DBR#
DPRSTP#
E5
DPSLP#
B5
DPWR#
D24
GTLREF
AD26
AC2
PRDY#
AC1
BCLK0
A22
BCLK1
A21
AD4
BPM0#
AD3
BPM1#
AD1
BPM2#
AC4
BPM3#
BSEL0
B22
BSEL1
B23
BSEL2
C21
100nF
C619
nostuff
PENRYN
J16-3
5
P1.5V
P1.05V
1%
27.4
R696
1%
54.9
100nF
C679
R609
3
1%
1K
R691
nostuff
1%
27.4
R611
nostuff
4
nostuff
1%
475
R613
nostuff
1%
40.2
R610
6
nostuff
0
R690
2
1
1%
R608
54.9
100nF
C680
0
R689
1%
R697
1K
C644
100nF
CPU1_TCK
CPU1_TDI
CPU1_TMS
CPU1_TRST#
CPU1_DPWR#
CPU1_PSI#
CPU1_BSEL0
CPU1_BSEL1
CPU1_BSEL2
ITP3_DBRESET#
CPU1_VCCSENSE
CPU1_TMS
CPU1_PWRGDCPU
CPU1_DPSLP#
CPU1_SLP#
CPU1_VSSSENSE
CPU1_DPRSTP#
CPU2_THERMDA
CPU2_THERMDC
CPU1_THRMTRIP#
CPU1_VID(6:0)
CLK0_HCLK0
CLK0_HCLK0#
CPU1_TCK
CPU1_TRST#
CPU1_TDI
Содержание Suede R710
Страница 18: ...2 12 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 19: ...2 13 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 20: ...2 14 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 21: ...2 15 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 22: ...2 16 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 26: ...2 20 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 27: ...2 21 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 34: ...2 28 This Document can not be used without Samsung s authorization 2 Introduction and Specification ...
Страница 134: ...3 13 This document cannot be used without the authorization of Samsung ...
Страница 136: ...4 2 2 Debugging Flow Chart This Document can not be used without Samsung s authorization 4 Troubleshooting ...
Страница 137: ...4 3 This Document can not be used without Samsung s authorization 4 Troubleshooting ...
Страница 138: ...4 4 This Document can not be used without Samsung s authorization 4 Troubleshooting ...
Страница 165: ...4 31 This Document can not be used without Samsung s authorization 4 Troubleshooting ...
Страница 166: ...4 32 This Document can not be used without Samsung s authorization 4 Troubleshooting ...
Страница 171: ...4 37 10 Memory addition method This Document can not be used without Samsung s authorization 4 Troubleshooting ...