< Vds Voltage Waveform on Sub-power Circuit FET >
Circuit Description
13-4
Samsung Electronics
ㆍ
Over Current Protection
O.C.P function in STR-V152 can be obtained by sensing the MOS-FET's drain peak current per 1 pulse (Pulse by Pulse
method). This sensing value comes from the voltage across sensing-resistor(R8122) between OCP(FET source,3Pin) and
GND(5Pin). Thus, this power board can protect any part's damage caused by over current flowing.
ㆍ
Over Load Protection
If there is an overload state in output ports due to some reason, this power board operates in UVLO mode for protection of
IC's damage.
ㆍ
Over Heat Protection
If the temperature on the chip parts is higher than about 135
℃
, this power board operates in thermal protection mode and
makes Latch on, finally this power board is shut down.
Содержание PS-50Q7HD
Страница 28: ...3 16 Samsung Electronics MEMO ...
Страница 48: ...Circuit Description 13 20 Samsung Electronics Scan_l Even_Scan Y Sustain ...
Страница 49: ...Circuit Description Samsung Electronics 13 21 Attachment 2 X Output Waveform X Sustain ...
Страница 50: ...13 22 Samsung Electronics MEMO ...
Страница 55: ...Block Diagram Samsung Electronics 7 5 7 2 4 Module Driver Board Block Diagram 1 Y Main Board 2 X Main Board ...
Страница 58: ...7 8 Samsung Electronics MEMO ...
Страница 66: ...9 8 Samsung Electronics MEMO ...
Страница 92: ...12 10 Samsung Electronics MEMO ...
Страница 107: ...6 14 Samsung Electronics MEMO ...
Страница 123: ...Samsung Electronics 5 2 MEMO ...