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- 4 -

Unbuffered SODIMM

datasheet

DDR3 SDRAM

Rev. 1.0

1. DDR3 Unbuffered SODIMM Ordering Information

NOTE

 :

1.  "##" - F8/H9
2.  F8 - 1066Mbps  7-7-7 & H9 - 1333Mbps 9-9-9

- DDR3-1333(9-9-9) is backward compatible to DDR3-1066(7-7-7)

2. Key Features

• JEDEC standard 1.5V ± 0.075V Power Supply
• V

DDQ

 = 1.5V ± 0.075V

• 400 MHz f

CK

 for 800Mb/sec/pin, 533MHz f

CK

 for 1066Mb/sec/pin, 667MHz f

CK

 for 1333Mb/sec/pin

• 8 independent internal bank
• Programmable CAS Latency: 5,6,7,8,9
• Programmable Additive Latency(Posted CAS) : 0, CL - 2, or CL - 1 clock
• Programmable CAS Write Latency(CWL) = 5(DDR3-800), 6(DDR3-1066) and 7(DDR3-1333)
• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or 

write [either On the fly using A12 or MRS]

• Bi-directional Differential Data Strobe
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower then T

CASE

 85

°

C, 3.9us at 85

°

C < T

CASE

 

≤ 

95

°

C

• Asynchronous Reset

3. Address Configuration

Part Number

2

Density

Organization

Component Composition

Number of 

Rank

Height

M471B1G73AH0-CF8/H9

8GB

1Gx64

512Mx8(K4B4G0846A-HC##)*16

2

30mm

Speed

DDR3-800

DDR3-1066

DDR3-1333

Unit

6-6-6

7-7-7

9-9-9

tCK(min)

2.5

1.875

1.5

ns

CAS Latency

6

7

9

tCK

tRCD(min)

15

13.125

13.5

ns

tRP(min)

15

13.125

13.5

ns

tRAS(min)

37.5

37.5

36

ns

tRC(min)

52.5

50.625

49.5

ns

Organization

Row Address

Column Address

Bank Address

Auto Precharge

512Mx8(4Gb) based Module

A0-A15

A0-A9

BA0-BA2

A10/AP

Содержание M471B1G73AH0

Страница 1: ...ty to the other party under this document by implication estoppel or other wise Samsung products are not intended for use in life support critical care medical safety equipment or similar applications where product failure could result in loss of life or personal or physical harm or any military or defense application or any governmental procurement to which special terms or provisions may apply F...

Страница 2: ... 2 Unbuffered SODIMM datasheet DDR3 SDRAM Rev 1 0 Revision History Revision No History Draft Date Remark Editor 1 0 First Release Jul 2010 S H Kim ...

Страница 3: ... Swing Requirement for Clock CK CK and Strobe DQS DQS 12 10 3 3 Single ended Requirements for Differential Signals 13 10 3 4 Differential Input Cross Point Voltage 14 10 4 Slew Rate Definition for Single Ended Input Signals 14 10 5 Slew rate definition for Differential Input Signals 14 11 AC DC Output Measurement Levels 15 11 1 Single Ended AC and DC Output Levels 15 11 2 Differential AC and DC Ou...

Страница 4: ...limit sequential with starting address 000 only 4 with tCCD 4 which does not allow seamless read or write either On the fly using A12 or MRS Bi directional Differential Data Strobe On Die Termination using ODT pin Average Refresh Period 7 8us at lower then TCASE 85 C 3 9us at 85 C TCASE 95 C Asynchronous Reset 3 Address Configuration Part Number2 Density Organization Component Composition Number o...

Страница 5: ...2 158 DQ46 21 DQ8 22 DQ12 89 A8 90 A6 159 DQ43 160 DQ47 23 DQ9 24 DQ13 91 A5 92 A4 161 VSS 162 VSS 25 VSS 26 VSS 93 VDD 94 VDD 163 DQ48 164 DQ52 27 DQS1 28 DM1 95 A3 96 A2 165 DQ49 166 DQ53 29 DQS1 30 RESET 97 A1 98 A0 167 VSS 168 VSS 31 VSS 32 VSS 99 VDD 100 VDD 169 DQS6 170 DM6 33 DQ10 34 DQ14 101 CK0 102 CK1 171 DQS6 172 VSS 35 DQ11 36 DQ15 103 CK0 104 CK1 173 VSS 174 DQ54 37 VSS 38 VSS 105 VDD...

Страница 6: ...trobe 1 DQS0 DQS7 Data strobes complement 8 CAS Column Address Strobe 1 RESET Reset Pin 1 WE Write Enable 1 TEST Logic Analyzer specific test pin No connect on SODIMM 1 S0 S1 Chip Selects 2 VDD Core and I O Power 18 A0 A9 A11 A13 A15 Address Inputs 14 VSS Ground 52 A10 AP Address Input Autoprecharge 1 VREFDQ VREFCA Input Output Reference 2 A12 BC Address Input Burst chop 1 VDDSPD SPD and Temp sens...

Страница 7: ...d and BA0 BAn defines the bank to be precharged If AP is low autoprecharge is disabled During a Precharge command cycle AP is used in conjunction with BA0 BAn to control which bank s to precharge If AP is high all banks will be pre charged regardless of the state of BA0 BAn inputs If AP is low then BA0 BAn are used to define which bank to pre charge A12 BC is sampled during READ and WRITE commands...

Страница 8: ...WE CK CK CKE ODT A N 0 BA N 0 ZQ DQ 0 7 DM 240Ω 1 DQ 0 7 D8 CS RAS CAS WE CK CK CKE ODT A N 0 BA N 0 ZQ 240Ω 1 DQS DQS DQ 0 7 DM DQS2 DQS2 DM2 DQS DQS D2 CS RAS CAS WE CK CK CKE ODT A N 0 BA N 0 ZQ DQ 0 7 DM 240Ω 1 DQ 16 23 D10 CS RAS CAS WE CK CK CKE ODT A N 0 BA N 0 ZQ 240Ω 1 DQS DQS DQ 0 7 DM DQS DQS D4 CS RAS CAS WE CK CK CKE ODT A N 0 BA N 0 ZQ DQ 0 7 DM 240Ω 1 D12 CS RAS CAS WE CK CK CKE ODT...

Страница 9: ...under all operating conditions 3 Some applications require operation of the Extended Temperature Range between 85 C and 95 C case temperature Full specifications are guaranteed in this range but the following additional conditions apply a Refresh commands must be doubled in frequency therefore reducing the refresh interval tREFI to 3 9us It is also possible to specify a component with 1X refresh t...

Страница 10: ... 2 15mV 5 VIH dc is used as a simplified symbol for VIH DQ DC100 6 VIL dc is used as a simplified symbol for VIL DQ DC100 7 VIH ac is used as a simplified symbol for VIH DQ AC175 VIH DQ AC150 VIH DQ AC175 value is used when VREF 175mV is referenced VIH DQ AC150 value is used when VREF 150mV is referenced 8 VIL ac is used as a simplified symbol for VIL DQ AC175 VIL DQ AC150 VIL DQ AC175 value is us...

Страница 11: ... levels for setup and hold time measurements VIH AC VIH DC VIL AC and VIL DC are dependent on VREF VREF shall be understood as VREF DC as defined in Figure 1 This clarifies that dc variations of VREF affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to which setup and hold is measured System timing and voltage budgets need to account for ...

Страница 12: ...the respective limits VIH DC max VIL DC min for single ended sig nals as well as the limitations for overshoot and undershoot Refer to overshoot and Undershoot Specification Table 3 Allowed time before ringback tDVAC for CK CK and DQS DQS Symbol Parameter DDR3 800 1066 1333 1600 unit NOTE min max VIHdiff differential input high 0 2 NOTE 3 V 1 VILdiff differential input low NOTE 3 0 2 V 1 VIHdiff A...

Страница 13: ...ingle ended signals through the ac levels is used to measure setup time For single ended components of differential signals the requirement to reach VSELmax VSEHmin has no bearing on timing but adds a restriction on the common mode characteristics of these signals Table 4 Single ended levels for CK DQS CK DQS NOTE 1 For CK CK use VIH VIL AC of ADD CMD for strobes DQS DQS use VIH VIL AC of DQs 2 VI...

Страница 14: ...lew rate definitions for address and command signals See Data Setup Hold and Slew Rate Derating for single ended slew rate definitions for data signals 10 5 Slew rate definition for Differential Input Signals Input slew rate for differential signals CK CK and DQS DQS are defined and measured as shown in below Table 6 Differential input slew rate definition NOTE The differential signal i e CK CK an...

Страница 15: ...ded output slew rate Description SR Slew Rate Q Query Output like in DQ which stands for Data in Query Output se Single ended Signals For Ron RZQ 7 setting Figure 6 Single ended output slew rate definition Symbol Parameter DDR3 800 1066 1333 1600 Units NOTE VOH DC DC output high measurement level for IV curve linearity 0 8 x VDDQ V VOM DC DC output mid measurement level for IV curve linearity 0 5 ...

Страница 16: ...l Output slew rate Description SR Slew Rate Q Query Output like in DQ which stands for Data in Query Output diff Differential Signals For Ron RZQ 7 setting Figure 7 Differential output slew rate definition Description Measured Defined by From To Differential output slew rate for rising edge VOLdiff AC VOHdiff AC VOHdiff AC VOLdiff AC Delta TRdiff Differential output slew rate for falling edge VOHd...

Страница 17: ...1 AL 0 CS stable at 1 Command Address Bank Address Inputs stable at 0 Data IO FLOATING DM stable at 0 Bank Activity all banks open Output Buffer and RTT Enabled in Mode Registers2 ODT Signal stable at 0 IDD4R Operating Burst Read Current CKE High External clock On tCK CL Refer to Component Datasheet for detail pattern BL 81 AL 0 CS High between RD Command Address Bank Address Inputs partially togg...

Страница 18: ...4 Auto Self Refresh ASR set MR2 A6 0B to disable or 1B to enable feature 5 Self Refresh Temperature Range SRT set MR2 A7 0B for normal or 1B for extended temperature range 6 Refer to DRAM supplier data sheet and or DIMM SPD to determine if optional features or requirements are supported by DDR3 SDRAM device 7 IDD current measure method and detail patterns are described on DDR3 component datasheet ...

Страница 19: ...actived rank IDLE is IDD2N Symbol CF8 DDR3 1066 CL 7 CH9 DDR3 1333 CL 9 Unit NOTE IDD0 600 680 mA 1 IDD1 720 800 mA 1 IDD2P0 slow exit 240 240 mA IDD2P1 fast exit 320 320 mA IDD2N 400 480 mA IDD2Q 400 400 mA IDD3P 400 400 mA IDD3N 520 600 mA IDD4R 960 1120 mA 1 IDD4W 1040 1280 mA 1 IDD5B 1440 1600 mA 1 IDD6 240 240 mA IDD7 1520 1880 mA 1 IDD8 240 240 mA ...

Страница 20: ...acitance 14 1 2Rx8 2GB SODIMM Parameter Symbol M471B1G73AH0 Units NOTE DDR3 1066 DDR3 1333 Min Max Min Max Input output capacitance DQ DM DQS DQS TDQS TDQS CIO TBD TBD pF Input capacitance CK and CK CCK TBD TBD pF Input capacitance All other input only pins CI TBD TBD pF ...

Страница 21: ...o active refresh cmd time tRFC 110 160 300 350 ns Average periodic refresh interval tREFI 0 C TCASE 85 C 7 8 7 8 7 8 7 8 μs 85 C TCASE 95 C 3 9 3 9 3 9 3 9 μs 1 Speed DDR3 800 DDR3 1066 DDR3 1333 DDR3 1600 Units NOTE Bin CL tRCD tRP 6 6 6 7 7 7 9 9 9 11 11 11 Parameter min min min min CL 6 7 9 11 tCK tRCD 15 13 13 13 5 13 75 ns tRP 15 13 13 13 5 13 75 ns tRAS 37 5 37 5 36 35 ns tRC 52 5 50 63 49 5...

Страница 22: ...ommand period tRP 13 125 ns ACT to ACT or REF command period tRC 50 625 ns ACT to PRE command period tRAS 37 5 9 tREFI ns CL 5 CWL 5 tCK AVG 3 0 3 3 ns 1 2 3 4 5 9 10 CWL 6 tCK AVG Reserved ns 4 CL 6 CWL 5 tCK AVG 2 5 3 3 ns 1 2 3 5 CWL 6 tCK AVG Reserved ns 1 2 3 4 CL 7 CWL 5 tCK AVG Reserved ns 4 CWL 6 tCK AVG 1 875 2 5 ns 1 2 3 4 8 CL 8 CWL 5 tCK AVG Reserved ns 4 CWL 6 tCK AVG 1 875 2 5 ns 1 2...

Страница 23: ... 9 tREFI ns CL 5 CWL 5 tCK AVG 3 0 3 3 ns 1 2 3 4 6 9 10 CWL 6 7 tCK AVG Reserved ns 4 CL 6 CWL 5 tCK AVG 2 5 3 3 ns 1 2 3 6 CWL 6 tCK AVG Reserved ns 1 2 3 4 6 CWL 7 tCK AVG Reserved ns 4 CL 7 CWL 5 tCK AVG Reserved ns 4 CWL 6 tCK AVG 1 875 2 5 ns 1 2 3 4 6 CWL 7 tCK AVG Reserved ns 1 2 3 4 CL 8 CWL 5 tCK AVG Reserved ns 4 CWL 6 tCK AVG 1 875 2 5 ns 1 2 3 6 CWL 7 tCK AVG Reserved ns 1 2 3 4 CL 9 ...

Страница 24: ... 2 5 3 3 ns 1 2 3 7 CWL 6 tCK AVG Reserved ns 1 2 3 4 7 CWL 7 8 tCK AVG Reserved ns 4 CL 7 CWL 5 tCK AVG Reserved ns 4 CWL 6 tCK AVG 1 875 2 5 ns 1 2 3 4 7 CWL 7 tCK AVG Reserved ns 1 2 3 4 7 CWL 8 tCK AVG Reserved ns 4 CL 8 CWL 5 tCK AVG Reserved ns 4 CWL 6 tCK AVG 1 875 2 5 ns 1 2 3 7 CWL 7 tCK AVG Reserved ns 1 2 3 4 7 CWL 8 tCK AVG Reserved ns 1 2 3 4 CL 9 CWL 5 6 tCK AVG Reserved ns 4 CWL 7 t...

Страница 25: ...subject to Production Tests but verified by Design Characterization 6 Any DDR3 1333 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design Characterization 7 Any DDR3 1600 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests ...

Страница 26: ... across n 13 14 49 50 cycles tERR nper tERR nper min 1 0 68ln n tJIT per min tERR nper max 1 0 68ln n tJIT per max ps 24 Absolute clock HIGH pulse width tCH abs 0 43 0 43 0 43 0 43 tCK avg 25 Absolute clock Low pulse width tCL abs 0 43 0 43 0 43 0 43 tCK avg 26 Data Timing DQS DQS to DQ skew per group per access tDQSQ 200 150 125 100 ps 13 DQ output hold time from DQS DQS tQH 0 38 0 38 0 38 0 38 t...

Страница 27: ...page size tFAW 40 37 5 30 30 ns e Four activate window for 2KB page size tFAW 50 50 45 40 ns e Command and Address setup time to CK CK referenced to VIH AC VIL AC levels tIS base AC175 200 125 65 45 ps b 16 tIS base AC150 200 150 125 150 65 125 45 125 ps b 16 27 Command and Address hold time from CK CK refer enced to VIH AC VIL AC levels tIH base DC100 275 200 140 120 ps b 16 Control Address Input...

Страница 28: ...CK 10 Timing of WR command to Power Down entry BC4MRS tWRPDEN WL 2 tWR tCK avg WL 2 tWR tCK avg WL 2 tWR tCK avg WL 2 tWR tCK avg nCK 9 Timing of WRA command to Power Down entry BC4MRS tWRAPDEN WL 2 WR 1 WL 2 WR 1 WL 2 WR 1 WL 2 WR 1 nCK 10 Timing of REF command to Power Down entry tREFPDEN 1 1 1 1 20 21 Timing of MRS command to Power Down entry tMRSPDEN tMOD min tMOD min tMOD min tMOD min ODT Tim...

Страница 29: ...e the device will support tnRP RU tRP tCK avg which is in clock cycles if all input clock jitter specifications are met This means For DDR3 800 6 6 6 of which tRP 15ns the device will support tnRP RU tRP tCK avg 6 as long as the input clock jitter specifications are met i e Precharge com mand at Tm and Active command at Tm 6 is valid even if Tm 6 Tm is less than 15ns due to input clock jitter Spec...

Страница 30: ...ose operations 21 Although CKE is allowed to be registered LOW after a REFRESH command once tREFPDEN min is satisfied there are cases where additional time such as tXPDLL min is also required See Device Operation Timing Diagram Datasheet 22 Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function 23 One ZQCS command can effectively correct a minimum of 0 5 ZQCorrect...

Страница 31: ...DDR3 SDRAM FBGA DDR3 SDRAM Part NO K4B4G0846A HC NOTE Tolerances on all dimensions 0 15 unless otherwise specified 0 25 MAX 2 55 Detail B Detail A 1 00 0 10 0 45 0 03 4 00 0 10 0 10 A B M C 2X 4 00 0 10 0 10 A B M C 2X 1 80 OPTIONAL HOLES 0 60 Units Millimeters 21 00 24 80 63 60 39 00 A B Max 3 8 1 00 0 10 SPD 1 65 6 30 00 0 15 20 00 67 60 0 10 A B M C ...

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