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TO-247N(-4L) Half-Bridge Evaluation Board 

User’s Guide 

© 2022 ROHM Co., Ltd.

 

No. 63UG059J Rev.001

 

2022.2

 

9.3 Boost power supply circuit

 

Figure 18 shows the boost operation test circuit in which the L-side MOSFET is switched. 

 

 

 

   

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 18 Operation test circuit based on boost circuit

 

 

 

 

First, prepare a pulse generator and connect the CLK signal to the IN_L_CLK pin (CN101 pin 1). Connect the 12 V power 

supply for control to the Vcc pin (CN201), the load inductance to the Vsw pin (T2), the high-voltage HVdc power supply to the 

load inductance, and the electronic load to the HVdc pin (T1) as shown in Figure 17. The HVdc side is the output, and since the 

output capacitor is mounted on the board, it is basically not necessary. However, if the oscillation frequency is low, it is 

recommended to add an appropriate value externally. In this case, ensure that the rated voltage of the capacitor is sufficient. 

The operating procedure is as follows. 

 

Turn on the +12 V power supply. 

 

Set the switching frequency and duty ratio using the pulse generator and input the CLK signal. 

 

Turn on the HVdc power supply. 

 

Adjust the output current with an electronic load device. 

 

In CCM mode, where the inductor current is continuous, the output voltage will be approximately as follows. 

   

Vout=Vin/(1-Duty) 

If the inductor current is discontinuous (output current is small), the output voltage will increase out of proportion to the duty ratio 

(output voltage varies with load current). This is because the pulses are not thinned out due to the open-loop control, but since 

the output voltage reaches several tens of times the input voltage, care must be taken to gradually increase the input voltage 

while keeping track of the output voltage value. When increasing the load current, pay attention to the heat generation of the 

evaluation device, and if necessary, install a heat sink capable of sufficient cooling or consider the ambient temperature. 

 

 

 

 

 

               
       

Pulse 

Generator 

(+5V output)

 

 

PGND

HVdc

DUT_HS

DUT_LS

HS-GADJ

LS-GADJ

IN_H_CLK

IN_L_CLK

LDO

Vcc1

DCR

Vsw

Vcc

ICAP

SNB

SGND

PGND

PGND

PGND

PGND

SGND

HS_GD

PRIMERY

SECONDERY

BD7F200

HS
Gate Power

LS_GD

LS 
Gate Power

BM61M41

BD7F200

BM61M41

VEE2

VCC2

VEE2

VCC2

Vcc1

HS_GSC

LS_GSC

UVLO2

UVLO2

RCD-SNB

RCD-SNB

HS-
VEESEL

LS-
VEESEL

SGND

VEE2

GND2

GND2

UVLO

UVLO1

UVLO

UVLO1

LS_CS

Load 

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Содержание P04SCT4018KE-EVK-001

Страница 1: ...4th Generation SiC MOSFET Half Bridge Evaluation Board User s Manual Downloaded From Oneyac com...

Страница 2: ...r life threatening injury Never touch the board with bare hands or bring it too close to your hand Also be careful when working with conductive instruments such as tweezers or screwdrivers as describe...

Страница 3: ...7 4L For detailed information on product specifications please refer to 4th generation SiC MOSFET Evaluation Board Product Specifications 1 Introduction Since this board has multiple voltage and signa...

Страница 4: ...a default setting surely other devices in TO 247N or TO 247 4L packages can also be mounted and evaluated In this case change the gate drive circuit constants according to the characteristics of each...

Страница 5: ...a number of LEDs to make it easy to monitor the board s operating status The approximate locations of the LEDs are shown in Figure 2 and their details are shown in Table 2 a PCB004P for TO 247N b PCB...

Страница 6: ...igure 3 Connector pin assignment Top view Silkscreen notation LED LED lighting Details HV alive Red Lit The LED lights up when there is a voltage of 20 V or more in the high voltage power supply HVdc...

Страница 7: ...n open it is pulled down with a 2 2 k resistor 02 SGND Input signal side GND Completely separated from the DUT side GND CN101 01 IN_L_CLK I Signal to turn on off the L side MOSFET Turns on when at H l...

Страница 8: ...the variable resistors RV51 and RV151 Rotating the variable resistors clockwise increases the output voltage 4 2 How to adjust the negative bias VEE2 The negative bias VEE2 which is the bias voltage...

Страница 9: ...8 27 TO 247N 4L Half Bridge Evaluation Board User s Guide 2022 ROHM Co Ltd No 63UG059J Rev 001 2022 2 Figure 5 Gate drive power supply circuit HS side VCC2 SOURCE VEE GND2 Downloaded From Oneyac com...

Страница 10: ...nal of the ROHM MOSFET driver IC BM61M41RFV C directly drives the MOSFET via the gate resistor Since the pattern inductance of the driver circuit affects the surge voltage characteristics of the gate...

Страница 11: ...verse If the anode is connected to the OUT pin of the driver IC U2 the turn on speed can be increased so it can be used in different ways depending on the characteristics of the device used Figure 7 G...

Страница 12: ...rrent at the drain pin and the L side can measure the current at the power source side Figure 9 shows the appearance of the probe related connections during measurement and the enlarged photo shows th...

Страница 13: ...parison of the characteristics of a general Rogowski type current probe and a coaxial type shunt resistor While the Rogowski type has a measurement bandwidth of several tens of MHz the coaxial type su...

Страница 14: ...f the device itself reaches several tens of Watts To install a heat sink the device must be mounted on the solder side The DUT is laid out on the same side so that the commutation device can also be i...

Страница 15: ...2022 ROHM Co Ltd No 63UG059J Rev 001 2022 2 Figure 14 Measurement view of heat sink installation Figure 15 Efficiency SCT4036KR BUCK Rg 3 3 DUT Mounted on the solder side Inductor Heat Sink Input Bulk...

Страница 16: ...L Inductor value H TDP_TTL Total time of double pulse signal s Normally the double pulse signal is a single shot but when it is applied periodically it is necessary to ensure sufficient reset time fo...

Страница 17: ...ing the external CLK signal to the IN_L_CLK pin CN101 pin 1 the procedure is the same as for the H side Pulse Generator 5V output PGND HVdc DUT_HS DUT_LS HS GADJ LS GADJ IN_H_CLK IN_L_CLK LDO Vcc1 DCR...

Страница 18: ...Turn on the HVdc power supply Adjust the output current with an electronic load device In CCM mode where the inductor current is continuous the output voltage will be approximately as follows Vout Vi...

Страница 19: ...HVdc power supply When the AC output is on the side the H side switches and when it is on the side the L side switches and by controlling the duty cycle of the CLK signal a sinusoidal voltage is outpu...

Страница 20: ...tor and input the CLK signal Turn on the HVdc power supply Adjust the output current with an electronic load device In CCM mode where the inductor current is continuous the output voltage will be appr...

Страница 21: ...m and an example of its mounting a Circuit diagram b Mounting example PCB005P H side Figure 21 RCD non discharge snubber circuit Q51 Q151 PGND SCT4090KRKR 1200V 90m SCT4090KR 1200V 90m 33nF 1000V 5750...

Страница 22: ...her hand the capacitance CSNB of the snubber capacitor is calculated from the energy stored in the inductance by the following equation Where VHVdc is the high voltage power supply and VSURGE is the m...

Страница 23: ...e suppression D54 C64 D154 C164 During turn off operation of the MOSFET in bridge configuration a negative surge occurs in VGS of the non switching side MOSFET which may exceed the maximum rating Ther...

Страница 24: ...line length between the MC pin and the MOSFET II Negative surge clamp circuit I Positive surge clamp circuit IV Additional capacitance between GS CGS Figure 24 shows an example of a protective circui...

Страница 25: ...side the third is VDS on the H side and the bottom waveform is ID on the H side The gate source pin surge is positive on the H side during turn on and negative on the HS and L sides during turn off S...

Страница 26: ...age is applied to the HVdc PGND pins check that LED301 red is lit If the LED does not light up check the applied voltage source and wiring The LED lights up when the input output voltage is approximat...

Страница 27: ...thods Application Note No 62AN0036JRev 001 ROHM Co Ltd June 2019 https fscdn rohm com en products databook applinote discrete sic mosfet sic mos_snubber_circuit_design_an e pdf 4 Improvement of Switch...

Страница 28: ...nformation The Products specified in this document are not designed to be radiation tolerant For use of our Products in applications requiring a high degree of reliability as exemplified below please...

Страница 29: ...ROHM Semiconductor Downloaded From Oneyac com...

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