FEDL22660-01
ML22660
■
Differences from Existing Speech Synthesis LSIs (ML22460)
Parameter
ML22460
ML22660
MCU command interface
I
2
C
←
Clock frequency
4.096MHz
(Built-in crystal oscillation
circuit)
4.096MHz
(Crystal oscillation
circuit/built-in RC Oscillation)
Memory capacity
External
Up to 128Mbits
←
Flash memory rewrite function
-
*1
Sound function
Speech synthesis
algorithm
4bit ADPCM2
8-bit non-linear PCM
8bit PCM
16-bit PCM
HQ-ADPCM
4bit ADPCM2
8-bit non-linear PCM
8bit straight PCM
16-bit straight PCM
Sampling frequency
(kHz)
6.4/12.8/25.6
4.0/8.0/16.0/32.0
5.3/10.7/21.3
12.0/24.0/48.0
6.4/12.8/25.6
8.0/16.0/32.0
10.7/21.3
11.025/22.05/44.1
12.0/24.0/48.0
Simultaneous
sounding function
(Mixing-function)
4 channels
←
Maximum number of
phrases
1024@1BANK
4096
BANK
4
-
Edit ROM function
Yes
←
Silence insertion
function
20ms to 1024ms
(4ms step)
←
Repeat function
Yes
←
Low-pass filter
FIR type interpolation filter
←
D/A converter
Voltage type 16-bit
←
Speaker amplifier
Class AB 0.7
W@8Ω
(SPV
DD
=5V)
Class AB/D 1.0
W@8Ω
(SPV
DD
=5V)
Volume
Digital
32 levels
128 levels
adjustment
Analog
50 levels
16 levels
function
Fade function
-
Yes
External analog input
Yes
←
Failure
detection
function
Clock error detection
-
Yes
Thermal detection
-
Yes
Speaker pin ground
fault detection
*2
-
Yes
Speaker pin short
detection
*2
-
Yes
Speaker disconnection
detection
-
Yes
Power-supply voltage
DV
DD
=SPV
DD
=2.7 to 5.5V
DV
DD
=2.7 to 5.5V
SPV
DD
≥DV
DD
IOV
DD
=2.7V to 5.5V
Operating temperature
-40 to 85
O
C
←
Package
30-pin SSOP
32-pin TQFP
*1 Controlling EROFF pin can prohibit the serial flash memory interface and can rewrite the serial flash memory by
connecting flash wrighter.
*2 The ground fault detection and short-circuit detection functions can be used when the SPV
DD
is 4.5V or higher.
108/116