1
1
2
2
3
3
4
4
5
5
A
A
B
B
C
C
D
D
SDRAM (64MB)
P7_3/RAS/(DRP06/TxD1)
P7_4/CAS/(DRP07/RTS1)
P6_5/(DRP01)/CS3
P7_1/RD/WR/(DRP05/RxD1)
P6_7/WE0/DQML/(DRP03)
P7_0/WE1/DQMU/(DRP04/SCK1)
P7_5/CKE/(DRP08/CTS1/OVRCUR1)
PK_3/(REF50CK1)/NAF6
PK_2/(RMII1_TXD1)/NAF5
PK_1/(RMII1_TXD0)/NAF4
PH_5/NAF2/(ET1_EXOUT)
PK_5/NAF1
P3_3/(ET1_MDC)/FWE
P3_1/(RMII1_RXER)/FALE
P3_5/(RMII1_RXD1)/FCLE
P3_2/(RMII1_CRSDV)/FRE
NAND-flash
PK_4/(RMII1_RXD0)/NAF7
P3_4/(ET1_MDIO)/FRB
PJ_6/FCE/(LCD0_CLK)
PJ_7/NAF0/(LCD0_EXTCLK)
PK_0/(RMII1_TXDEN)/NAF3
PD_6/RIIC3SCL
PD_7/RIIC3SDA
EEPROM(16KB)
EEPROM
SDRAM
NAND
CKIO
[2]
A[15:1]
[3]
1_P7_[1:0]
[3]
1_P7_[5:3]
[3]
1_P6_7/DQML
[3]
1_P6_5/CS3
[3]
DB[15:0]
[2,3]
PD_[7:2]
[2,9]
PK_[5:0]
[2,4]
2_PK_[4:0]
[4]
2_P3_[5:1]
[4]
2_PH_5
[4]
2_PJ_[7:6]
[4]
D3.3V
D3.3V
D3.3V
D3.3V
D3.3V
D3.3V
D3.3V
Renesas Electronics Corporation.
DATE
APPROVED
SCALE
DESIGNED
CHECKED
DRAWN
CHANGE
( / )
8
10
R20UT4395EJ0100
18-10-09
RZ/A2M SUB board
Memory(EEPROM, NAND, SDRAM)
Renesas Electronics Corporation.
DATE
APPROVED
SCALE
DESIGNED
CHECKED
DRAWN
CHANGE
( / )
8
10
R20UT4395EJ0100
18-10-09
RZ/A2M SUB board
Memory(EEPROM, NAND, SDRAM)
Renesas Electronics Corporation.
DATE
APPROVED
SCALE
DESIGNED
CHECKED
DRAWN
CHANGE
( / )
8
10
R20UT4395EJ0100
18-10-09
RZ/A2M SUB board
Memory(EEPROM, NAND, SDRAM)
RA8
MNR14_22Ω
1
2
3
4
5
6
7
8
C
P
65
0.1µF
R118
22kΩ
C
P
63
0.1µF
R110
22kΩ
R116
22kΩ
R135
0Ω
R
131
22k
Ω
RA4
MNR14_22Ω
1
2
3
4
5
6
7
8
R112
22kΩ
RA5
MNR14_22kΩ
1
2
3
4
5
6
7
8
R
129
22k
Ω
Spansion
U31
_S34ML04G1
I/O7
44
I/O6
43
I/O5
42
I/O4
41
I/O3
32
I/O2
31
I/O1
30
I/O0
29
WE
18
ALE
17
CLE
16
RE
8
R/B
7
CE
9
WP
19
Vss1
13
Vss2
36
VCC1
37
VCC2
12
NC1
1
NC2
2
NC3
3
NC4
4
NC5
5
NC6
6
NC7
10
NC8
11
NC9
14
NC10
15
NC11
20
NC12
21
NC13
22
NC14
23
NC15
24
Vss3(ONFI)
25
NC16
26
NC18
27
NC19
28
NC20
33
VCC3(ONFI)
34
NC22
35
NC23
38
VCC4(ONFI)
39
NC25
40
NC26
45
NC27
46
NC28
47
Vss4(ONFI)
48
R117
22kΩ
C
P
72
0.1µF
R
127
22k
Ω
R
125
22k
Ω
R1
01
22
kΩ
R119
22kΩ
R122
22kΩ
RENESAS
U32
R1EX24128ASA00A
A0
1
A1
2
A2
3
VSS
4
VCC
8
WP
7
SCL
6
SDA
5
R
107
22k
Ω
R121
22kΩ
C
P
62
0.1µF
R120
22kΩ
+
C
E
12
4.7µF/10V
R1
05
22
kΩ
R114
22kΩ
C
P
71
0.1µF
C
P
66
0.1µF
R1
06
22
kΩ
R1
02
22
kΩ
C
P
70
0.1µF
R
108
_22k
Ω
R1
04
22
kΩ
C
P
64
0.1µF
RA6
MNR14_22Ω
1
2
3
4
5
6
7
8
ISSI
U30
IS42S16320F
BA1
21
BA0
20
A11
35
A10
22
A9
34
A8
33
A7
32
A6
31
A5
30
A4
29
A3
26
A2
25
A1
24
A0
23
CS
19
RAS
18
CAS
17
WE
16
DQMH
39
DQML
15
CKE
37
CLK
38
DQ15
53
DQ14
51
DQ13
50
DQ12
48
DQ11
47
DQ10
45
DQ9
44
DQ8
42
DQ7
13
DQ6
11
DQ5
10
DQ4
8
DQ3
7
DQ2
5
DQ1
4
DQ0
2
VSS
28
VSS
41
VSS
54
VSSQ
6
VSSQ
12
VSSQ
46
VSSQ
52
VDD
1
VDD
14
VDD
27
VDDQ
3
VDDQ
9
VDDQ
43
VDDQ
49
NC
40
A12
36
R123
22kΩ
RA2
MNR14_22Ω
1
2
3
4
5
6
7
8
R
126
22k
Ω
RA3
MNR14_22kΩ
1
2
3
4
5
6
7
8
R1
03
22
kΩ
R115
22kΩ
R124
22kΩ
R
128
22k
Ω
R113
22kΩ
C
P
67
0.1µF
C
P
61
0.1µF
RA1
MNR14_22kΩ
1
2
3
4
5
6
7
8
+
CE13
4.7µF/10V
R
109
_22k
Ω
C
P
69
0.1µF
R
130
22k
Ω
R132
0Ω
CP68
0.1µF
R136
0Ω
R111
22kΩ
R134
22kΩ
R
100
_22k
Ω
C
31
_18pF
RA7
MNR14_22kΩ
1
2
3
4
5
6
7
8
R133
0Ω
1_P7_0
A4
A6
A8
A9
A12
A5
A2
A11
A10
A3
A7
A1
1_P7_4
1_P7_1
D5
D3
D8
D7
D0
D2
D6
D10
D11
D4
D1
D9
D15
D14
D12
D13
A13
A14
A15
1_P7_3
DB[15:0]
A13
A14
A15
A4
A6
A8
A9
A12
A5
A2
A11
A10
A3
A7
A1
1_P7_0
1_P7_1
1_P7_3
1_P7_4
1_P7_5
1_P7_5
D[15:0]
DB1
DB2
DB3
DB0
DB5
DB6
DB7
DB4
DB11
DB8
DB9
DB10
DB15
DB13
DB14
DB12
2_PJ_6
2_P3_3
2_PK_3
2_P3_5
2_P3_1
PK_5
2_PK_2
2_PK_1
2_PK_4
2_PK_0
2_PH_5
2_PJ_7
2_P3_2
2_P3_4
PD_7
PD_6
PD_7
PD_6
PK_0
PK_1
PK_2
PK_3
PK_4
PK_5
2_PK_1
2_PK_0
2_PK_2
2_PK_3
2_PK_4
2_P3_1
2_P3_2
2_P3_3
2_P3_4
2_P3_5
2_PH_5
2_PJ_6
2_PJ_7
DB4
DB5
DB6
DB7
D7
D6
D5
D4
DB11
DB10
DB9
DB8
D11
D10
D9
D8
DB12
D12
DB13
D13
DB14
D14
DB15
D15
DB0
D0
DB1
D1
DB2
D2
DB3
D3
Содержание RTK79210**B00000BE
Страница 88: ...RZ A2M SUB Board RTK79210XXB00000BE Appendix 1 R20UT4398EJ0100 Rev 1 00 Appendix 1 2 2018 10 11 ...
Страница 100: ...RZ A2M SUB Board RTK79210XXB00000BE Appendix 2 R20UT4398EJ0100 Rev 1 00 Appendix 2 2 2018 10 11 ...
Страница 106: ...RZ A2M SUB Board RTK79210XXB00000BE User s Manual R20UT4398EJ0100 ...