Renesas HSG2004 Скачать руководство пользователя страница 2

HSG2004 

Rev.4.00  Jun 21, 2006  page 2 of 12 

 

Electrical Characteristics

 

(Ta = 25°C) 

Item Symbol 

Min 

Typ 

Max 

Unit 

Test 

Conditions 

DC current transfer ratio 

h

FE

  170 240 320 

 

V

CE

 = 3 V, I

C

 = 30 mA 

Reverse Transfer Capacitance 

C

re

 

 

 0.6 pF 

V

CB

 = 3 V, I

E

 = 0, f = 1 MHz, 

emitter grounded 

Transition Frequency 

f

T

 

 30.0 

 GHz 

V

CE

 = 3 V, I

C

 = 30 mA, 

f = 1 GHz 

Maximum Stable Gain 

MSG 

14 

15.5 

 dB 

V

CE

 = 3 V, I

C

 = 30 mA, 

f = 5.8 GHz 

Maximum Available Gain 

MAG 

 21 

 dB 

V

CE

 = 3 V, I

C

 = 30 mA, 

f = 2.4 GHz 

Maximum Available Gain 

MAG 

 12 

 dB 

V

CE

 = 3 V, I

C

 = 30 mA, 

f = 5.8 GHz 

Power Gain 

PG 

 11.5 

 dB 

V

CE

 = 3.6 V, I

idle

 = 30 mA, 

f = 5.8 GHz, Pin = +0 dBm 

1dB Compression Point at output 

P1dB 

 +14.5 

 dBm 

V

CE

 = 3.6 V, I

idle

 = 30 mA, 

f = 5.8 GHz 

Saturation Output Power 

Po(sat) 

 +22 

 dBm 

V

CE

 = 3.6 V, I

idle

 = 30 mA, 

f = 5.8 GHz, Pin = +0 dBm 

 

Main Characteristics 

0

50

100

150

200

Collector Power Dissipation Pc

*   (mW)

Collector Power Dissipation Curve

Ambient Temperature    T

 

(°C)

1500

1000

500

*(4 x 4 x 1mm) on PCB

 

Содержание HSG2004

Страница 1: ...e Outline Renesas Package code PWQN0008ZA A Package name HWQFN 8 TNP 8TV 1 Collector 2 Collector 3 Collector 4 Emitter 5 Emitter 6 Base 7 Emitter 8 Emitter 9 Emitter 1 3 7 6 5 2 4 8 9 1 3 7 6 5 2 4 8...

Страница 2: ...4 15 5 dB VCE 3 V IC 30 mA f 5 8 GHz Maximum Available Gain MAG 21 dB VCE 3 V IC 30 mA f 2 4 GHz Maximum Available Gain MAG 12 dB VCE 3 V IC 30 mA f 5 8 GHz Power Gain PG 11 5 dB VCE 3 6 V Iidle 30 mA...

Страница 3: ...Characteristics 200 0 1 10 100 Collector Current IC mA DC Current Transfer Ratio h FE DC Current Transfer Ratio vs Collector Current 300 400 100 Reverse Transfer Capacitanse C re pF Reverse Transfer C...

Страница 4: ...40 40 40 0 40 20 60 Input Power Pin dBm 3rd Order Intermodulation Distortion IMD3 50 20 2 0 3 5 30 10 40 0 10 20 20 1 5 3 0 4 0 2 5 1 0 Frequency f GHz S parameter dB S parameter vs Frequency 2 0 3 5...

Страница 5: ...10 20 20 5 7 8 6 4 Frequency f GHz S parameter dB S parameter vs Frequency 20 0 20 40 40 40 0 40 20 60 Input Power Pin dBm P out IMD3 dBm 3rd Order Intermodulation Distortion IMD3 60 20 100 0 150 200...

Страница 6: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Страница 7: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Страница 8: ...3 4 5 1 5 10 0 30 60 90 120 150 180 150 90 60 30 120 30 60 90 120 150 180 150 90 60 30 120 10 5 4 3 2 1 5 1 8 2 3 4 5 10 6 4 2 0 2 4 6 8 1 1 5 2 4 6 8 1 2 3 4 5 1 5 10 Scale 14 div Scale 0 04 div 0 Co...

Страница 9: ...000 0 668 169 3 8 08 64 1 0 0294 34 3 0 432 144 1 2100 0 669 167 1 7 65 62 4 0 0297 35 2 0 435 145 2 2200 0 673 164 9 7 27 60 7 0 0304 35 9 0 438 146 2 2300 0 678 163 1 6 92 59 2 0 0310 36 5 0 441 147...

Страница 10: ...00 0 667 169 5 8 14 64 14 0 0294 35 0 0 431 143 6 2100 0 667 167 3 7 71 62 39 0 0297 35 5 0 434 144 8 2200 0 671 165 1 7 33 60 67 0 0305 35 8 0 437 145 7 2300 0 676 163 3 6 97 59 20 0 0311 36 7 0 440...

Страница 11: ...0 0 665 169 8 8 18 64 18 0 0292 34 2 0 431 143 2 2100 0 666 167 5 7 75 62 44 0 0298 34 7 0 433 144 3 2200 0 670 165 3 7 37 60 71 0 0306 35 9 0 436 145 4 2300 0 675 163 5 7 01 59 24 0 0310 36 8 0 439 1...

Страница 12: ...5 0 60 7 3 2 ZD Z E C0 15 1 e A S B S y1 P HWQFN8 2x2 0 65 PWQN0008ZA A TNP 8TV 0 009g MASS Typ RENESAS Code JEITA Package Code Previous Code Package Name HWQFN 8 Ordering Information Part Name Quanti...

Страница 13: ...loss resulting from the information contained herein 5 Renesas Technology Corp semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which...

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