2SK3069
Rev.11.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(
°
C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(m
Ω
)
200
150
100
0
50
100
150
200
0.1
0.3
1
3
10
30
100
100
80
60
40
20
0
2
4
6
8
10
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25
°
C
10
µ
s
100
µ
s
1 ms
DC Operat
ion
(Tc = 25
°
C)
Operation in
this area is
limited by R
DS(on)
PW = 10 ms (1 shot)
3.5 V
3 V
50
V
GS
= 10 V
5 V
4 V
2.5 V
100
80
60
40
20
0
1
2
3
4
5
Tc = –25
°
C
25
°
C
75
°
C
V
DS
= 10 V
Pulse Test
Pulse Test
0
4
8
12
16
20
2.0
1.6
1.2
0.8
0.4
Pulse Test
I
D
= 50 A
20 A
10 A
1
20
100
2
100
2
5
1
10
200
20
10
V
GS
= 4 V
10 V
Pulse Test
50
50
5
