
Rev. A 10/18
33
Application Note
AN-72
www.power.com
Application Examples
PI-8430-082018
C6
680 pF
250 VAC
C11
560
µ
F
35 V
C14
1
µ
F
100 V
1
2
6
FL1
T1
PQ26/20
9
19 V, 3.4 A
TP3
RTN
R9
47
Ω
1/10 W
Q1
AO4294
3
4
5
D
V
S
IS
GND
SR
VO
FWD
FB
CONTROL
R11
12
Ω
NC
C10
2.2 nF
250 V
R10
0.007
Ω
1%
1/2 W
VR1
MMSZ5232B-7-F
R14
10 k
Ω
1%
1/16 W
R13
143 k
Ω
1%
1/8 W
R12
100
Ω
1/10 W
BPP
BP
S
C8
10 nF
C7
2.2
µ
F
25 V
C12
560
µ
F
35 V
D3
DFLR1200-7
200 V
C2
120
µ
F
400 V
C4
22
µ
F
50 V
C9
330 pF
50 V
C5
4.7
µ
F
50 V
C3
2.2 nF
630 V
1
1
4
2
3
4
2
3
R6
49.9 k
Ω
1%
1/8 W
R7
1.80 M
Ω
1%
R8
1.80 M
Ω
1%
R2
2 M
Ω
R1
1.5 M
Ω
D
S
R4
47
Ω
2 W
R3
100 k
Ω
R5
5.1 k
Ω
1/10 W
D1
FR107G
D2
DFLR1200-7
200 V
BR1
GBU4J-BP
600 V
C1
220 nF
275 VAC
F1
3.15 A
90 - 265
VAC
N
TP2
L
TP1
RT1
2.5
Ω
t
O
L1
15 mH
L2
155
µ
H
InnoSwitch3-CE
U1
INN3168C-H101
Figure 26. Schematic of DER-535 65 W, 19 V Power Supply using INN3168C.
A High Efficiency, 65 W Universal Input Power Supply
(InnoSwitch3-CE)
The circuit shown in Figure 26 delivers 65 W (19 V at 3.4 A) at higher
than 90% average efficiency from 90 VAC to 265 VAC input using
INN3168C.
The bleeding resistors, R1 and R2, are used to discharge the stored
energy in C1 to meet safety requirement. The input capacitor C2 is
sufficient to maintain full output power delivery at 90 VAC input, and
Resistors R6, R7, and R8 provide line voltage sensing. At
approximately 100 V DC, the current through these resistors exceeds
the line undervoltage threshold, which enables U1. At approximately
420 V DC, the current through these resistors exceeds the line
overvoltage threshold, disabling U1. A low cost RCD clamp formed by
D1, R3, R4, and C3 limits the peak drain voltage due to the interaction
of transformer leakage reactance with output trace inductance.
The secondary-side of the INN3168C provides output voltage and
output current sensing, and provides drive to a synchronous
rectification MOSFET. Output rectification for the 19 V output is
provided by SR FET Q1. Very low ESR capacitors, C11 and C12,
provide filtering. RC snubber network comprising R11 and C10 for Q1
damps high frequency ringing across the SR FET, which results from
leakage of the transformer windings and the secondary trace.
Capacitor C8 protects U1 from ESD. Adding a small SMD ceramic
capacitor between the OUTPUT VOLTAGE pin and the GROUND pin
improves ESD and surge protection. The OVP sensing Zener diode,
VR1, provides secondary-side output over voltage protection via R12.
Output common mode choke L2 reduces high frequency common
mode noise and protects U1 from common mode surge.
A heat spreader is required to keep the InnoSwitch3 device
below
110 °C when operating under full load, low-line, while at maximum
ambient temperature.