TZA3046_1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 19 May 2006
12 of 15
Philips Semiconductors
TZA3046
Fiber Channel/Gigabit Ethernet transimpedance amplifier
12. Bare die information
13. Package outline
Not applicable.
Origin is center of die.
Fig 10. Bonding pad locations
Table 5:
Physical characteristics of the bare die
Parameter
Value
Glass passivation
0.3
µ
m PSG (PhosphoSilicate Glass) on top of 0.8
µ
m silicon nitride
Bonding pad
dimension
minimum dimension of exposed metallization is 90
µ
m
×
90
µ
m
(pad size = 100
µ
m
×
100
µ
m) except pads 2 and 3 which have exposed
metallization of 80
µ
m
×
80
µ
m (pad size = 90
µ
m
×
90
µ
m)
Metallization
2.8
µ
m AlCu
Thickness
380
µ
m nominal
Die dimension
820
µ
m
×
1300
µ
m (
±
20
µ
m
2
)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
< 440
°
C; recommended die attach is glue
Attach time
< 15 s
4
5
6
(0,0)
X
Y
17
16
15
14
13
12
11
7
8
9
10
001aac627
1
2
3
