Philips Semiconductors
Product specification
TOPFET high side switch
BUK216-50YT
SMD version
OVERLOAD PROTECTION / DETECTION CHARACTERISTICS
6 V
≤
V
BG
≤
35 V, limits are at -40˚C
≤
T
mb
≤
150˚C and typicals at T
mb
= 25 ˚C unless otherwise stated.
Refer to
TRUTH TABLE
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
V
BL
= V
BG
I
L(lim)
Load current limiting
V
BG
≥
9 V
10
15
21
A
Short circuit load detection
Status indication only
V
BL(TO)
Battery load threshold voltage
1
V
BG
= 16 V
8
10
12
V
V
BG
= 35 V
15
20
25
V
Overtemperature protection
T
j(TO)
Threshold junction
150
170
190
˚C
temperature
2
SWITCHING CHARACTERISTICS
T
mb
= 25 ˚C, V
BG
= 13 V, for resistive load R
L
= 13
Ω
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
During turn-on
from input going high
t
d on
Delay time
to 10% V
L
-
40
60
µ
s
dV/dt
on
Rate of rise of load voltage
30% to 70% V
L
-
0.5
1
V/
µ
s
t
on
Total switching time
to 90% V
L
-
160
225
µ
s
During turn-off
3
from input going low
t
d off
Delay time
to 90% V
L
-
70
100
µ
s
dV/dt
off
Rate of fall of load voltage
70% to 30% V
L
-
0.5
1
V/
µ
s
t
off
Total switching time
to 10% V
L
-
95
130
µ
s
CAPACITANCES
T
mb
= 25 ˚C; f = 1 MHz; V
IG
= 0 V. designed in parameters.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
ig
Input capacitance
V
BG
= 13 V
-
15
20
pF
C
bl
Output capacitance
V
BL
= 13 V
-
425
600
pF
C
sg
Status capacitance
V
SG
= 5 V
-
11
15
pF
1 The battery to load threshold voltage for short circuit detection is proportional to the battery supply voltage.
2 Latched protection. After cooling below the threshold temperature the switch will resume normal operation only after the input has been
toggled low.
3 For measurement purposes an Input pulse of 1.5ms is used to ensure the device is stabilised in the on state.
March 2002
6
Rev 1.200