Philips Semiconductors
Product specification
Triacs
BT136 series
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
full cycle
-
-
3.0
K/W
junction to mounting base
half cycle
-
-
3.7
K/W
R
th j-a
Thermal resistance
in free air
-
60
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT136-
...
...F
...G
I
GT
Gate trigger current
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
-
5
35
25
50
mA
T2+ G-
-
8
35
25
50
mA
T2- G-
-
11
35
25
50
mA
T2- G+
-
30
70
70
100
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
T2+ G+
-
7
20
20
30
mA
T2+ G-
-
16
30
30
45
mA
T2- G-
-
5
20
20
30
mA
T2- G+
-
7
30
30
45
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
5
15
15
30
mA
V
T
On-state voltage
I
T
= 5 A
-
1.4
1.70
V
V
GT
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
-
0.7
1.5
V
V
D
= 400 V; I
T
= 0.1 A;
0.25
0.4
-
V
T
j
= 125 ˚C
I
D
Off-state leakage current
V
D
= V
DRM(max)
;
-
0.1
0.5
mA
T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
BT136-
...
...F
...G
dV
D
/dt
Critical rate of rise of
V
DM
= 67% V
DRM(max)
;
100
50
200
250
-
V/
µ
s
off-state voltage
T
j
= 125 ˚C; exponential
waveform; gate open
circuit
dV
com
/dt
Critical rate of change of
V
DM
= 400 V; T
j
= 95 ˚C;
-
-
10
50
-
V/
µ
s
commutating voltage
I
T(RMS)
= 4 A;
dI
com
/dt = 1.8 A/ms; gate
open circuit
t
gt
Gate controlled turn-on
I
TM
= 6 A; V
D
= V
DRM(max)
;
-
-
-
2
-
µ
s
time
I
G
= 0.1 A; dI
G
/dt = 5 A/
µ
s
August 1997
2
Rev 1.200
