2001 Oct 22
3
Philips Semiconductors
Product specification
600 MHz, 18.5 dB gain push-pull amplifier
BGY685AD
CHARACTERISTICS
Table 1
Bandwidth 40 to 600 MHz; V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Ω
Notes
1. V
p
= V
q
= 44 dBmV;
f
p
= 55.25 MHz; f
q
= 541.25 MHz;
measured at f
p
+ f
q
= 596.5 MHz.
2. Measured according to DIN45004B:
f
p
= 590.25 MHz; V
p
= V
o
;
f
q
= 597.25 MHz; V
q
= V
o
−
6 dB;
f
r
= 599.25 MHz; V
r
= V
o
−
6 dB;
measured at f
p
+ f
q
−
f
r
= 588.25 MHz.
3. The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
18
19
dB
f = 600 MHz
18.75
−
dB
SL
slope cable equivalent
f = 40 to 600 MHz
0.2
2.2
dB
FL
flatness of frequency response
f = 40 to 600 MHz
−
±
0.3
dB
S
11
input return losses
f = 40 to 80 MHz
20
−
dB
f = 80 to 160 MHz
19
−
dB
f = 160 to 600 MHz
18
−
dB
S
22
output return losses
f = 40 to 80 MHz
20
−
dB
f = 80 to 160 MHz
19
−
dB
f = 160 to 600 MHz
18
−
dB
S
21
phase response
f = 50 MHz
−
45
+45
deg
CTB
composite triple beat
85 channels flat;
V
o
= 44 dBmV;
measured at 595.25 MHz
−
−
62
dB
X
mod
cross modulation
85 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
−
−
58
dB
CSO
composite second order distortion
85 channels flat;
V
o
= 44 dBmV;
measured at 596.5 MHz
−
−
60
dB
d
2
second order distortion
note 1
−
−
70
dB
V
o
output voltage
d
im
=
−
60 dB; note 2
62
−
dBmV
F
noise figure
f = 50 MHz
−
6
dB
f = 600 MHz
−
8
dB
I
tot
total current consumption (DC)
note 3
−
250
mA