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2001 Nov 01

3

Philips Semiconductors

Product specification

860 MHz, 20 dB gain power doubler amplifier

BGD904L

CHARACTERISTICS
Bandwidth 40 to 900 MHz; V

B

= 24 V; T

mb

= 35

°

C; Z

S

= Z

L

= 75

.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

G

p

power gain

f = 50 MHz

19.7

20

20.3

dB

f = 900 MHz

20.5

21

21.5

dB

SL

slope straight line

f = 40 to 900 MHz

0.4

0.9

1.4

dB

FL

flatness straight line

f = 40 to 900 MHz

±

0.15

±

0.3

dB

S

11

input return losses

f = 40 to 80 MHz

21

25

dB

f = 80 to 160 MHz

22

30

dB

f = 160 to 320 MHz

21

29

dB

f = 320 to 550 MHz

18

24

dB

f = 550 to 650 MHz

17

22

dB

f = 650 to 900 MHz

16

21

dB

S

22

output return losses

f = 40 to 80 MHz

25

29

dB

f = 80 to 160 MHz

23

28

dB

f = 160 to 320 MHz

19

25

dB

f = 320 to 750 MHz

18

24

dB

f = 750 to 900 MHz

17

23

dB

S

21

phase response

f = 50 MHz

45

+45

deg

CTB

composite triple beat

49 channels flat; V

o

= 47 dBmV;

f

m

= 859.25 MHz

65.5

64

dB

77 channels flat; V

o

= 44 dBmV;

f

m

= 547.25 MHz

67.5

65.5

dB

110 channels flat; V

o

= 44 dBmV;

f

m

= 745.25 MHz

61

59.5

dB

129 channels flat; V

o

= 44 dBmV;

f

m

= 859.25 MHz

57

55

dB

110 channels; f

m

= 397.25 MHz;

V

o

= 49 dBmV at 550 MHz; note 1

61.5

59.5

dB

129 channels; f

m

= 649.25 MHz;

V

o

= 49.5 dBmV at 860 MHz; note 2

56

54

dB

X

mod

cross modulation

49 channels flat; V

o

= 47 dBmV;

f

m

= 55.25 MHz

64

61

dB

77 channels flat; V

o

= 44 dBmV;

f

m

= 55.25 MHz

66.5

64

dB

110 channels flat; V

o

= 44 dBmV;

f

m

= 55.25 MHz

63

60.5

dB

129 channels flat; V

o

= 44 dBmV;

f

m

= 55.25 MHz

61.5

59

dB

110 channels; f

m

= 397.25 MHz;

V

o

= 49 dBmV at 550 MHz; note 1

60

57.5

dB

129 channels; f

m

= 859.25 MHz;

V

o

= 49.5 dBmV at 860 MHz; note 2

56

53.5

dB

Содержание BGD904L

Страница 1: ...DATA SHEET Product specification Supersedes data of 1999 Aug 17 2001 Nov 01 DISCRETE SEMICONDUCTORS BGD904L 860 MHz 20 dB gain power doubler amplifier book halfpage M3D252 ...

Страница 2: ...115J package operating with a supply voltage of 24 V PINNING SOT115J PIN DESCRIPTION 1 input 2 common 3 common 5 VB 7 common 8 common 9 output Fig 1 Simplified outline handbook halfpage 7 8 9 2 3 5 1 Side view MSA319 QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 60134 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Gp power gain f 50 MHz 19 7 20 3 dB f 900...

Страница 3: ...0 to 320 MHz 19 25 dB f 320 to 750 MHz 18 24 dB f 750 to 900 MHz 17 23 dB S21 phase response f 50 MHz 45 45 deg CTB composite triple beat 49 channels flat Vo 47 dBmV fm 859 25 MHz 65 5 64 dB 77 channels flat Vo 44 dBmV fm 547 25 MHz 67 5 65 5 dB 110 channels flat Vo 44 dBmV fm 745 25 MHz 61 59 5 dB 129 channels flat Vo 44 dBmV fm 859 25 MHz 57 55 dB 110 channels fm 397 25 MHz Vo 49 dBmV at 550 MHz...

Страница 4: ...r Vo 6 dB measured at fp fq fr 538 25 MHz 9 The module normally operates at VB 24 V but is able to withstand supply transients up to 35 V CSO composite second order distortion 49 channels flat Vo 47 dBmV fm 860 5 MHz 69 63 dB 77 channels flat Vo 44 dBmV fm 548 5 MHz 73 68 dB 110 channels flat Vo 44 dBmV fm 746 5 MHz 69 63 dB 129 channels flat Vo 44 dBmV fm 860 5 MHz 65 59 dB 110 channels fm 150 MH...

Страница 5: ...ig 3 Cross modulation as a function of frequency under tilted conditions ZS ZL 75 Ω VB 24 V 110 chs tilt 9 dB 50 to 550 MHz tilt 3 5 dB at 6 dB offset 550 to 750 MHz handbook halfpage 0 Vo dBmV f MHz Xmod dB 200 50 60 80 90 70 52 48 40 36 44 400 600 800 MGS453 1 1 2 3 4 1 Vo 2 Typ 3 σ 3 Typ 4 Typ 3 σ Fig 4 Composite second order distortion as a function of frequency under tilted conditions ZS ZL 7...

Страница 6: ...0 MGS455 2 3 4 1 Fig 6 Cross modulation as a function of frequency under tilted conditions ZS ZL 75 Ω VB 24 V 129 chs tilt 12 5 dB 50 to 860 MHz 1 Vo 2 Typ 3 σ 3 Typ 4 Typ 3 σ handbook halfpage 0 Vo dBmV f MHz Xmod dB 200 1000 50 60 80 90 70 52 48 40 36 44 400 600 800 MGS456 2 3 4 1 Fig 7 Composite second order distortion as a function of frequency under tilted conditions ZS ZL 75 Ω VB 24 V 129 ch...

Страница 7: ...voltage ZS ZL 75 Ω VB 24 V 129 chs fm 859 25 MHz 1 Typ 3 σ 2 Typ 3 Typ 3 σ handbook halfpage 40 Vo dBmV 45 50 55 MGS458 CTB dB 20 30 40 50 60 70 1 2 3 Fig 9 Composite second order distortion as a function of output voltage ZS ZL 75 Ω VB 24 V 129 chs fm 860 5 MHz 1 Typ 3 σ 2 Typ 3 Typ 3 σ handbook halfpage 40 Vo dBmV 45 50 55 MGS459 CSO dB 30 40 50 60 70 80 2 3 1 ...

Страница 8: ... 27 2 2 54 13 75 2 54 5 08 12 7 8 8 4 15 3 85 2 4 38 1 25 4 10 2 4 2 44 75 8 0 25 0 1 3 8 b F p 6 32 UNC y w S DIMENSIONS mm are the original dimensions SOT115J 0 5 10 mm scale A max D max L min E max Z max Rectangular single ended package aluminium flange 2 vertical mounting holes 2 x 6 32 UNC and 2 extra horizontal mounting holes 7 gold plated in line leads SOT115J D U1 q q2 q1 b F S A Z p E A2 ...

Страница 9: ...ting values definition Limiting values given are in accordance with the Absolute Maximum Rating System IEC 60134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiti...

Страница 10: ...2001 Nov 01 10 Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L NOTES ...

Страница 11: ...2001 Nov 01 11 Philips Semiconductors Product specification 860 MHz 20 dB gain power doubler amplifier BGD904L NOTES ...

Страница 12: ...bility will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Philips Semiconductors a worldwide company Contact information For additional information please visit http www semiconductors philips com Fax 31 40 27 24825 For sales offices addresses send e mail to sale...

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