Multi Chip Discrete
Publication date: October 2007
SJJ00402AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP0KG8DG
Silicon epitaxial planar type (SBD)
Silicon PNP epitaxial planar type (Tr)
For digital circuits
Features
Two elements incorporated into one package (SBD
+
Tr)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts
Basic Part Number
MA2SD240G
+
UNR31A3G
Absolute Maximum Ratings
T
a
= 25
°
C
Parameter
Symbol
Rating
Unit
SBD
Reverse voltage
V
R
20
V
Repetitive peak reverse voltage
V
RRM
20
V
Forward current (Average)
I
F(AV)
200
mA
Peak forward current
I
FM
300
mA
Non-repetitive peak forward
surge current
I
FSM
1
A
Tr
Collector-base voltage
(Emitter open)
V
CBO
-
50
V
Collector-emitter voltage
(Base open)
V
CEO
-
50
V
Collector current
I
C
-
80
mA
Overall
Total power dissipation
P
T
125
mW
Junction temperature
T
j
125
°
C
Storage temperature
T
stg
–55 to +125
°
C
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Package
Code
SSMini5-F3
Pin Name
1: Anode
4: Collector
2: Base
5: Cathode
3: Emitter
Marking Symbol: 6K
Internal Connection
3
4
1
2
5
Tr
SBD
