Panasonic Transistors 2SD1823, Технические характеристики

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2SD1823
2 SJC00229BED
V
CE(sat)

I
C
h
FE

I
C
f
T

I
E
P
C

T
a
I
C

V
CE
I
C

V
BE
C
ob

V
CB
0 160 40 120 80
0
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
°
C)
0 12 10 8 2 6 4
0
160
120
40
80
T
a
=
25
°
C
20
µ
A
30
µ
A
40
µ
A
50
µ
A
60
µ
A
70
µ
A
80
µ
A
90
µ
A
10
µ
A
I
B
=
100
µ
A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0 2.0 1.6 0.4 1.2 0.8
0
120
100
80
60
40
20
V
CE
=
10 V
T
a
=
75
°
C
−
25
°
C
25
°
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1 1 10 100
0.01
0.1
1
10
100
I
C
/ I
B
=
10
25
°
C
−
25
°
C
T
a
=
75
°
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1 1 10 100
0
1 800
1 500
1 200
900
600
300
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
−
25
°
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−
0.1
−
1
−
10
−
100
0
250
200
150
100
50
V
CB
=
10 V
T
a
=
25
°
C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
1 10 100
0
8
6
2
4
I
E
=
0
f
=
1 MHz
T
a
=
25
°
C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
This product complies with the RoHS Directive (EU 2002/95/EC).