Panasonic Transistors 2SC4805G, Технические характеристики

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2SC4805G
2 SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
V
CE(sat)

I
C
h
FE

I
C
f
T

I
C
P
C

T
a
I
C

V
CE
I
C

V
BE
C
ob

V
CB
G
UM

I
C
NF

I
C
0 160 40 120 80
0
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
°
C)
0 12 10 8 2 6 4
0
30
25
20
15
10
5
T
a
=
25
°
C
200
µ
A
150
µ
A
100
µ
A
50
µ
A
I
B
=
250
µ
A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0 1.2 1.0 0.8 0.2 0.6 0.4
0
120
100
80
60
40
20
V
CE
=
8 V
T
a
=
75
°
C
−
25
°
C
25
°
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1 1 10 100
0.001
0.01
0.1
1
10
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
−
25
°
C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1 1 10 100
0
240
200
160
120
80
40
V
CE
=
8 V
T
a
=
75
°
C
25
°
C
−
25
°
C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1 10 100
0
12
10
8
6
4
2
V
CB
=
8 V
f
=
1.5 GHz
T
a
=
25
°
C
Transition frequency f
T
(GHz
)
Collector current I
C
(mA)
1 10 100
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
=
0
f
=
1 MHz
T
a
=
25
°
C
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
0.1 1 10 100
0
12
10
8
6
4
2
V
CE
=
8 V
f
=
1.5 GHz
T
a
=
25
°
C
Maximum unilateral power gain G
UM
(dB
)
Collector current I
C
(mA)
0.1 1 10 100
0
6
5
4
3
2
1
V
CE
=
8 V
f
=
1.5 GHz
T
a
=
25
°
C
Noise figure NF
(dB
)
Collector current I
C
(mA)