Transistors
1
Publication date: May 2007
SJC00367AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4805G
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
■
Features
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
1
µ
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
1 V, I
C
=
0
1
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
8 V, I
C
=
20 mA
50
300
Transition frequency
f
T
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
7.0
8.5
GHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
7
9
dB
Maximum unilateral power gain
G
UM
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
10
dB
Noise figure
NF
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
2.2
3.0
dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
65
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
50 to 120
100 to 170
150 to 300
50 to 300
Marking symbol
3SQ
3SR
3SS
3S
Product of no-rank is not classified and have no indication for rank.
■
Package
•
Code
SMini3-F2
•
Marking Symbol: 3S
•
Pin Name
1: Base
2: Emitter
3: Collector
