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Transistors

1

Publication date: April 2007

SJC00364AED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SC3938G

Silicon NPN epitaxial planar type

For high-speed switching

Features

Low collector-emitter saturation voltage V

CE(sat)

S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 40 V, I

E

 

=

 0

0.1

µ

A

Emitter-base cutoff current (Collector open)

I

EBO

V

EB

 

=

 4 V, I

C

 

=

 0

0.1

µ

A

Forward current transfer ratio 

*

h

FE

V

CE

 

=

 1 V, I

C

 

=

 10 mA

60

200

Collector-emitter saturation voltage

V

CE(sat)

I

C

 

=

 10 mA, I

B

 

=

 1 mA

0.17

0.25

V

Base-emitter saturation voltage

V

BE(sat)

I

C

 

=

 10 mA, I

B

 

=

 1 mA

1

V

Transition frequency

f

T

V

CB

 

=

 10 V, I

E

 

=

 

10 mA, f 

=

 200 MHz

450

MHz

Collector output capacitance

C

ob

V

CB

 

=

 10 V, I

E

 

=

 0, f 

=

 1 MHz

2

6

pF

(Common base, input open circuited)

Turn-on time

t

on

Refer to the measurement circuit

17

ns

Turn-off time

t

off

17

ns

Storage time

t

stg

10

ns

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

40

V

Collector-emitter voltage (E-B short)

V

CES

40

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

100

mA

Peak collector current

I

CP

300

mA

Collector power dissipation

P

C

150

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to 

+

150

°

C

Rank

Q

R

h

FE

60 to 120

90 to 200

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Package

Code
SMini3-F2

Marking Symbol: 2Y

Pin Name

1. Base
2. Emitter
3. Collector

Содержание Transistors 2SC3938G

Страница 1: ...on voltage VBE sat IC 10 mA IB 1 mA 1 V Transition frequency fT VCB 10 V IE 10 mA f 200 MHz 450 MHz Collector output capacitance Cob VCB 10 V IE 0 f 1 MHz 2 6 pF Common base input open circuited Turn on time ton Refer to the measurement circuit 17 ns Turn off time toff 17 ns Storage time tstg 10 ns Electrical Characteristics Ta 25 C 3 C Parameter Symbol Rating Unit Collector base voltage Emitter o...

Страница 2: ...20 100 80 60 40 20 Ta 25 C 2 5 mA 2 0 mA 1 5 mA 1 0 mA 0 5 mA IB 3 0 mA Collector current I C mA Collector emitter voltage VCE V 0 1 1 10 100 0 01 0 1 1 10 100 IC IB 10 Ta 75 C 25 C 25 C Collector emitter saturation voltage V CE sat V Collector current IC mA 1 10 100 1000 0 01 0 1 1 10 100 Ta 25 C 25 C 75 C Base emitter saturation voltage V BE sat V Collector current IC mA 0 1 1 10 100 0 600 500 4...

Страница 3: ... product complies with the RoHS Directive EU 2002 95 EC SMini3 F2 Unit mm 0 30 0 05 0 02 0 13 0 05 0 02 2 00 0 20 0 89 0 90 0 10 0 65 0 65 1 30 0 10 1 25 0 10 2 10 0 10 0 425 0 050 0 49 0 to 0 10 5 5 3 1 2 ...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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