Panasonic Transistors 2SC3931 Скачать руководство пользователя страница 2

2SC3931

2

SJC00142BED

I

C

 

 V

BE

V

CE(sat)

 

 I

C

h

FE

 

 I

C

P

C

 

 T

a

I

C

 

 V

CE

I

C

 

 I

B

f

T

 

 I

E

Z

rb

 

 I

E

C

re

 

 V

CE

0

160

40

120

80

0

200

160

120

80

40

Collector power dissipation   P

C

  

(mW

)

Ambient temperature  T

a

  (

°

C)

0

18

6

12

0

12

10

8

6

4

2

T

a

 

=

 25

°

C

I

B

 

=

 100 

µ

A

80 

µ

A

60 

µ

A

40 

µ

A

20 

µ

A

Collector current  I

C

  

(mA

)

Collector-emitter voltage  V

CE

  (V)

0

180

60

120

0

12

10

8

6

4

2

V

CE

 

=

 6 V

T

a

 

=

 25

°

C

Base current  I

B

  (

µ

A)

Collector current  I

C

  

(mA

)

0

2.0

1.6

0.4

1.2

0.8

0

30

25

20

15

10

5

V

CE

 

=

 6 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Base-emitter voltage  V

BE

  (V)

Collector current  I

C

  

(mA

)

0.1

1

10

100

0.01

0.1

1

10

100

I

C

 / I

B

 

=

 10

T

a

 

=

 75

°

C

25

°

C

25

°

C

Collector-emitter saturation voltage  V

CE(sat)

  

(V

)

Collector current  I

C

  (mA)

0.1

1

10

100

0

360

300

240

180

120

60

V

CE

 

=

 6 V

T

a

 

=

 75

°

C

25

°

C

25

°

C

Forward current transfer ratio  h

FE

Collector current  I

C

  (mA)

 0.1

1

10

100

0

1 200

1 000

800

600

400

200

V

CB

 

=

 6 V

T

a

 

=

 25

°

C

Transition frequency  f

T

  

(MHz

)

Emitter current  I

E

  (mA)

 0.1

1

10

0

120

100

80

60

40

20

V

CB

 

=

 6 V

=

 2 MHz

T

a

 

=

 25

°

C

Reverse transfer impedance  Z

rb

  

(

)

Emitter current  I

E

  (mA)

0.1

1

10

100

0

2.4

2.0

1.6

1.2

0.8

0.4

I

C

 

=

 1 mA

=

 10.7 MHz

T

a

 

=

 25

°

C

Collector-emitter voltage  V

CE

  (V)

Common-emitter reverse transfer capacitance  C

re

  (

pF

)

This product complies with the RoHS Directive (EU 2002/95/EC).

Содержание Transistors 2SC3931

Страница 1: ...Emitter open VCBO IC 10 µA IE 0 30 V Emitter base voltage Collector open VEBO IE 10 µA IC 0 3 V Base emitter voltage VBE VCB 6 V IE 1 mA 720 mV Forward current transfer ratio hFE VCB 6 V IE 1 mA 65 260 Transition frequency fT VCB 6 V IE 1 mA f 200 MHz 450 650 MHz Common emitter reverse transfer Cre VCB 6 V IE 1 mA f 10 7 MHz 0 8 1 0 pF capacitance Power gain GP VCB 6 V IE 1 mA f 100 MHz 24 dB Nois...

Страница 2: ...or current I C mA 0 1 1 10 100 0 01 0 1 1 10 100 IC IB 10 Ta 75 C 25 C 25 C Collector emitter saturation voltage V CE sat V Collector current IC mA 0 1 1 10 100 0 360 300 240 180 120 60 VCE 6 V Ta 75 C 25 C 25 C Forward current transfer ratio h FE Collector current IC mA 0 1 1 10 100 0 1200 1000 800 600 400 200 VCB 6 V Ta 25 C Transition frequency f T MHz Emitter current IE mA 0 1 1 10 0 120 100 8...

Страница 3: ... mA 4 mA 7 mA I E 0 5 mA 150 f 10 7 MHz 58 58 25 25 Input conductance gie mS Input susceptance b ie mS 0 5 0 0 1 0 4 0 2 0 3 6 0 1 2 3 4 5 yre gre jbre VCE 10 V f 150 MHz IE 7 mA 4 mA 1 mA 25 58 100 10 7 Reverse transfer conductance gre mS Reverse transfer susceptance b re mS 0 100 80 20 60 40 120 0 20 40 60 80 100 yfe gfe jbfe VCE 10 V f 150 MHz 10 7 0 4 mA 1 mA 2 mA 4 mA IE 7 mA 100 100 100 150 ...

Страница 4: ...ard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing your equipmen...

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