Panasonic Transistors 2SB1722G, Технические характеристики

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2SB1722G
2 SJC00389AED
This product complies with the RoHS Directive (EU 2002/95/EC).
V
CE(sat)

I
C
h
FE

I
C
C
ob

V
CB
P
C

T
a
I
C

V
CE
I
C

V
BE
Ambient temperature T
a
(
°
C)
Collector power dissipation P
C
(mW)
0 150 75 25 125 50 100
0
150
50
125
100
25
75
0
−
12
−
10
−
8
−
2
−
6
−
4
0
−
35
−
30
−
25
−
20
−15
−10
−5
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
−2.0
mA
I
B
= −5.0
mA
T
a
=
25
°
C
−4.5
mA
−4.0
mA
−2.5
mA
−3.0
mA
−3.5
mA
−1.5
mA
−1.0
mA
− 0.5
mA
0
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1
−50
−45
−40
−35
−30
−25
−20
−15
−10
−5
Base-emitter voltage V
BE
(V)
Collector current I
C
(m
A
)
V
CE
= −
10 V
T
a
=
85
°
C
−
25
°
C
25
°
C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
−
1
− 0.1
− 0.01
−
0.01
− 0.
1
−
1
−
10
−
100
25
°
C
T
a
=
85
°
C
−
25
°
C
I
C
/I
B
=
10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−
1
−
10
−
100
0
500
300
250
350
400
450
200
150
100
50
V
CE
= −
10 V
T
a
=
85
°
C
−
25
°
C
25
°
C
0
−
20
−
30
−
10
−
40
0.1
10
1
100
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
=
1 MHz
T
a
=
25
°
C