Transistors
1
Publication date: April 2007
SJC00352AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB1218G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD1819G
■
Features
•
High forward current transfer ratio h
FE
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
45
V
Collector-emitter voltage (Base open)
V
CEO
−
45
V
Emitter-base voltage (Collector open)
V
EBO
−
7
V
Collector current
I
C
−
100
mA
Peak collector current
I
CP
−
200
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
45
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
2 mA, I
B
=
0
−
45
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
−
20 V, I
E
=
0
−
0.1
µ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
−
10 V, I
B
=
0
−
100
µ
A
Forward current transfer ratio
*
h
FE
V
CE
=
−
10 V, I
C
=
−
2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
100 mA, I
B
=
−
10 mA
−
0.3
−
0.5
V
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
1 mA, f
=
200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
2.7
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
BQ
BR
BS
B
Product of no-rank is not classified and have no marking symbol for rank.
■
Package
•
Code
SMini3-F2
•
Marking Symbol: B
•
Pin Name
1. Base
2. Emitter
3. Collector
