Panasonic Transistors 2SB1030A, Технические характеристики

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2SB1030A
2
SJC00418AED
This product complies with the RoHS Directive (EU 2002/95/EC).
P
C
 T
a
I
C
 V
CE
V
CE(sat)
 I
C
V
BE(sat)
 I
C
h
FE
 I
C
f
T
 I
E
0 160 40 120 80
0
500
400
300
200
100
Collector power dissipation
P
C
(
mW
)
Ambient temperature T
a
( ° C)
2SB1030_P
C
-T
a
0 − 12 − 10 − 8 − 2 − 6 − 4
0
− 1.2
− 1.0
− 0.8
− 0.6
− 0.4
− 0.2
T
a
= 25 ° C
− 9 mA
− 8 mA
− 7 mA
− 6 mA
− 5 mA
− 4 mA
− 3 mA
− 2 mA
− 1 mA
I
B
= − 10 mA
Collector current
I
C
(
A
)
Collector-emitter voltage V
CE
(V)
2SB1030_I
C
-V
CE
− 0.01 − 0.1 − 1 − 10
− 0.01
− 0.1
− 1
− 10
− 100
I
C
/ I
B
= 10
T
a
= − 25 ° C
75 ° C
25 ° C
Base-emitter saturation voltage
V
BE(sat
)
(
V
)
Collector current I
C
(A)
2SB1030_V
BE(sat)
-I
C
− 0.01 − 0.1 − 1 − 10
0
600
500
400
300
200
100
V
CE
= − 10 V
T
a
= 75 ° C
25 ° C
− 25 ° C
Forward current transfer ratio
h
FE
Collector current I
C
(A)
2SB1030_h
FE
-I
C
0.1 1 10 100
0
160
120
40
80
V
CB
= − 10 V
T
a
= 25 ° C
Tr
ansition frequency
f
T
(
MHz
)
Emitter current I
E
(mA)
2SB1030_f
T
-I
E
− 1 − 100 − 10
0
20
16
12
8
4
I
E
= 0
f = 1 MHz
T
a
= 25 ° C
Collector-base voltage V
CB
(V)
2SB1030_C
ob
-V
CB
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
− 10 − 100 − 1000
0
240
200
160
120
80
40
V
CE
= − 10 V
T
a
= 25 ° C
Function = FLAT
4.7 k Ω
R
g
= 100 k Ω
22 k Ω
Noise voltage NV
(mV
)
Collector current I
C
( µ A)
2SB1030_NV-I
C
− 0.01 − 0.1 − 1 − 10
− 0.01
− 0.1
− 1
− 10
− 100
I
C
/ I
B
= 10
T
a
= 75 ° C
25 ° C
− 25 ° C
Collector
-emitter saturation voltage
V
CE(sat
)
(
V
)
Collector current I
C
(A)
2SB1030_V
CE(sat)
-I
C
C
ob
 V
CB
NV  I
C