Panasonic Schottky Barrier Diodes MA3J745EG, Технические характеристики, Страница: 2 / 4

MA3J745EG
2
SKH00234AED
This product complies with the RoHS Directive (EU 2002/95/EC).
I
F
 V
F
I
R
 V
R
V
F
 T
a
I
R
 T
a
C
t
 V
R
I
F(AV)
 T
a
10 –2
0 0.4 0.8 1.2 1.6 2.0 2.4
10 –1
1
10
10 2
10 3
Forward voltage V
F
(V)
Forward current
I
F
(
mA
)
T
a
= 125 ° C
− 20 ° C
75 ° C 25 ° C
10 − 1
0 5 10 15 20 25 30
1
10
10 2
10 3
10 4
Reverse voltage V
R
(V)
Reverse current
I
R
(
µ
A
)
T
a
= 125 ° C
75 ° C
25 ° C
0
0.2
0.4
0.6
0.8
1.0
− 40 0 40 80 120 160
Ambient temperature T
a
( ° C)
Forward voltage
V
F
(
V
)
I
F
= 30 mA
10 mA
1 mA
10 − 1
− 40 0 40 80 120 160 200
1
10
10 2
10 3
10 4
Ambient temperature T
a
( ° C)
Reverse current
I
R
(
µ
A
)
V
R
= 30 V
3 V
1 V
0
0.8
1.6
2.4
3.2
0 10 20 30
Reverse voltage V
R
(V)
Te
rminal capacitance
C
t
(
pF
)
f = 1 MHz
T
a
= 25 ° C
0
10
20
40
30
50
0
DC
40 160 120 80
Terminal capacitance T
a
(
° C)
T
j
= 125 ° C
Forward current (A
verage)
I
F(
AV
)
(m
A
)
t
p
T
I
F