MTM86628
SJF00111AED
4
This product complies with the RoHS Directive (EU 2002/95/EC).
P
D
T
a
I
D
V
DS
R
DS(on)
V
GS
R
DS(on)
I
D
C
X
V
DS
0
40
80
160
120
0
400
200
600
MTM86628_ P
D
-T
a
To
tal power dissipation
P
D
(mW)
Ambient temperature T
a
(
°
C)
0
−
0.2
−
0.4
−
1.0
−
0.6
−
0.8
0
−
0.02
−
0.04
−
0.06
−
0.08
−
0.10
MTM86628_ I
D
-V
DS
Drain current
I
D
(A)
Drain-source voltage V
DS
(V)
−
1.4 V
−
1.2 V
V
GS
=
−
1.6 V
0
−
2
−
10
−
8
−
6
−
4
0.1
0.2
0.3
0.4
0.5
MTM86628_
R
DS(on)
-V
GS
Drain-source ON resistance
R
DS(on)
(
Ω
)
Gate-source voltage V
GS
(V)
I
D
=
−
0.5 A
−
0.1
−
1.0
0
0.1
0.2
0.3
0.4
0.5
MTM86628_
R
DS(on)
-
I
D
Drain-source ON resistance
R
DS(on)
(
Ω
)
Drain current I
D
(A)
V
GS
=
2.5 V
4.0 V
−
5
0
−
15
−
20
−
10
0
20
40
60
120
100
80
MTM86628_
C
X
-
V
DS
Drain-source voltage V
DS
(V)
Short-circuit input capacitance (Common source)
C
iss
,
Short-circuit output capacitance (Common source
)
C
oss
,
Reverse transfer capacitance (Common source)
C
rss
(pF)
C
iss
C
oss
C
rss
Characteristics charts of FET
Characteristics charts of SBD
I
F
V
F
I
R
V
R
C
t
V
R
0
0.2
0.6
0.4
10
3
1
10
10
2
MTM86628_I
F
-V
F
Forward current
I
F
(m
A
)
Forward voltage V
F
(V)
T
a
= 75
°
C
−
25
°
C
25
°
C
0
9
12
6
3
15
10
−
1
1
10
10
3
10
2
10
4
MTM86628_I
R
-V
R
Reverse current
I
R
(
µ
A
)
Reverse voltage V
R
(V)
T
a
= 75
°
C
−
25
°
C
25
°
C
0
20
10
15
5
0
40
20
60
80
100
MTM86628_C
t
-V
R
Te
rminal capacitance
C
t
(pF)
Reverse voltage V
R
(V)