Panasonic MTM86628 Скачать руководство пользователя страница 3

 

MTM86628

 

SJF00111AED 

4

 

This product complies with the RoHS Directive (EU 2002/95/EC).

 

P

D

 

 T

a

 

I

D

 

 V

DS

 

R

DS(on) 

 V

GS

 

R

DS(on)

 

 I

D

 

C

X

 

 V

DS

0

40

80

160

120

0

400

200

600

MTM86628_ P

D

-T

a

To

tal power dissipation  

P

D

  (mW)

Ambient temperature  T

a

  (

°

C)

0

 0.2

 0.4

1.0

 0.6

 0.8

0

 0.02

− 

0.04

 0.06

 0.08

 0.10

MTM86628_ I

D

-V

DS

Drain current  

I

D

  (A)

Drain-source voltage  V

DS

  (V)

1.4 V

1.2 V

V

GS

 

=

 

1.6 V

0

2

10

8

6

4

0.1

0.2

0.3

0.4

0.5

MTM86628_ 

R

DS(on)

-V

GS

Drain-source ON resistance  

R

DS(on)

  (

)

Gate-source voltage  V

GS

  (V)

I

D

 

=

 

 0.5 A

 0.1

1.0

0

0.1

0.2

0.3

0.4

0.5

MTM86628_ 

R

DS(on)

-

I

D

Drain-source ON resistance  

R

DS(on)

  (

)

Drain current  I

D

  (A)

V

GS

 

=

 2.5 V

4.0 V

5

0

15

20

10

0

20

40

60

120

100

80

MTM86628_ 

C

X

-

V

DS

Drain-source voltage  V

DS

  (V)

Short-circuit input capacitance (Common source)

  C

iss

 ,

Short-circuit output capacitance (Common source

)  

C

oss

 ,

Reverse transfer capacitance (Common source)  

C

rss

  (pF)

C

iss

C

oss

C

rss

Characteristics charts of FET

Characteristics charts of SBD

 

I

F

 

 V

F

 

I

R

 

 V

R

 

C

 V

R

0

0.2

0.6

0.4

10

3

1

10

10

2

MTM86628_I

F

-V

F

Forward current  

I

F

  (m

A

)

Forward voltage  V

F

  (V)

T

a

 = 75

°

C

25

°

C

25

°

C

0

9

12

6

3

15

10

1

1

10

10

3

10

2

10

4

MTM86628_I

R

-V

R

Reverse current  

I

R

  (

µ

A

)

Reverse voltage  V

R

  (V)

T

a

 = 75

°

C

25

°

C

25

°

C

0

20

10

15

5

0

40

20

60

80

100

MTM86628_C

t

-V

R

Te

rminal capacitance  

C

t

  (pF)

Reverse voltage  V

R

  (V)

Содержание MTM86628

Страница 1: ...e WSSMini6 F1 1 6 mm 1 6 mm 0 5 mm Absolute Maximum Ratings Ta 25 C Parameter Symbol Rating Unit FET Drain source surrender voltage VDSS 20 V Gate source surrender voltage VGSS 12 V Drain current ID 1 0 A Peak drain current 1 IDP 4 0 A Channel temperature Tch 150 C Storage temperature Tstg 55 to 150 C Total power dissipation PD1 2 540 mW PD2 3 150 mW SBD Reverse voltage VR 15 V Forward current Ave...

Страница 2: ... Ciss VDS 10 V VGS 0 f 1 MHz 80 pF Short circuit output capacitance Common source Coss 12 pF Reverse transfer capacitance Common source Crss 12 pF Turn on delay time td on VDD 15 V VGS 4 0 V ID 0 5A 12 ns Rise time tr 6 ns Turn off delay time td off 17 ns Fall time tf 10 ns Note 1 Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors 2 ton toff me...

Страница 3: ..._ RDS on ID Drain source ON resistance R DS on Ω Drain current ID A VGS 2 5 V 4 0 V 5 0 15 20 10 0 20 40 60 120 100 80 MTM86628_ CX VDS Drain source voltage VDS V Short circuit input capacitance Common source C iss Short circuit output capacitance Common source C oss Reverse transfer capacitance Common source C rss pF Ciss Coss Crss Characteristics charts of FET Characteristics charts of SBD IF VF...

Страница 4: ...F00111AED This product complies with the RoHS Directive EU 2002 95 EC WSSMini6 F1 Unit mm 0 05 0 02 1 60 0 05 1 00 0 05 0 50 0 50 1 60 0 05 0 10 1 40 0 05 0 50 0 05 0 20 0 05 0 03 0 13 6 5 4 1 2 3 0 to 0 02 5 5 0 15 ...

Страница 5: ...han the standard applications intended 4 The products and product specifications described in this book are subject to change without notice for modification and or im provement At the final stage of your design purchasing or use of the products therefore ask for the most up to date Product Standards in advance to make sure that the latest specifications satisfy your requirements 5 When designing ...

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