Zener Diodes
Publication date: September
2005
SKE
00028
AED
1
MALT062H
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD:
±
30
kV
Four elements anode-common type
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Total power dissipation
*
1
P
D
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
–
55
to +
150
°
C
Electrostatic discharge
*
2
ESD
±
30
kV
Note) *
1
: P
D
=
150
mW achieved with a printed circuit board.
*
2
: Test method: IEC
61000
-
4
-
2
(C =
150
pF, R =
330
Ω
, Contact discharge:
10
times)
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown voltage
*
V
BR
I
R
=
1
mA
5
.
8
6
.
2
6
.
6
V
Reverse current
I
R
V
R
=
4
.
0
V
1
.
0
µ
A
Terminal capacitance
C
t
V
R
=
0
V, f =
1
MHz
55
pF
Note)
1
. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
2
. The temperature must be controlled
25
°
C for V
BR
mesurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(
25
°
C)
3
. *: V
BR
guaranted
20
ms after current flow.
Unit: mm
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
EIAJ: SC-81
SSMini3-F2 Package
0.28
±
0.05
3
1 2
0.28
±
0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51)
(0.51)
0 to 0.
1
(0.15)
3
°
(0.44)
(0.44)
0.88
(0.375)
+0.0
5
–0.03
0.80
±
0.05
(0.80)
1.60
±
0.05
3
°
Marking Symbol:
6
.
2
E
Internal Connection
2
1
3
This product complies with the RoHS Directive (EU 2002/95/EC).
