Switching Diodes
1
Publication date: March 2004
SKF00043BED
MA4X159A
(MA159A)
Silicon epitaxial planar type
For switching circuits
■
Features
•
Two isolated elements contained in one package, allowing high-
density mounting
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Reverse voltage
V
R
80
V
Maximum peak reverse voltage
V
RM
80
V
Forward current
Single
I
F
100
mA
Double
75
Peak forward
Single
I
FM
225
mA
current
Double
170
Non-repetitive peak
Single
I
FSM
500
mA
forward surge current
*
Double
375
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Internal Connection
Note) *: t
=
1 s
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
= 100 mA
0.95
1.20
V
Reverse voltage
V
R
I
R
= 100
µ
A
80
V
Reverse current
I
R
V
R
= 75 V
100
nA
Terminal capacitance
C
t
V
R
= 0 V, f
= 1 MHz
0.9
2.0
pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V
3
ns
I
rr
= 0.1 I
R
, R
L
= 100
Ω
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
4
1
3
2
Marking Symbol: M1B
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0.60
+0.10
–0.05
0.40
+0.10
–0.05
1.1
+0.2 –0.1
1.1
+0.3 –0.1
1.50
+0.25 –0.05
2.8
+0.2 –0.3
1.9
±
0.2
(0.65)
(0.2)
(0.95)
(0.95)
0 to 0.1
3
4
2
1
0.5R
1: Cathode 1
2: Cathode 2
3: Anode 2
4: Anode 1
EIAJ: SC-61
Mini4-G1 Package
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
