Fast Recovery Diodes (FRD)
Publication date: October
2006
SKJ
00016
CED
1
This product complies with RoHS Directive (EU
2002
/
95
/EC).
MA2YF80
Silicon epitaxial planar type
For high speed switching circuits
For strobe light circuits (high voltage rectification)
Features
High repetitive peak reverse voltage V
RRM
Short reverse recovery time t
rr
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
V
RRM
800
V
Non-repetitive peak reverse surge voltage
V
RSM
800
V
Forward current
I
F
200
mA
Non-repetitive peak forward surge current
*
I
FSM
1
A
Junction temperature
T
j
–
40
to +
150
°
C
Storage temperature
T
stg
–
40
to +
150
°
C
Note) *:
50
Hz sine wave
1
cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
V
F
I
F
=
200
mA
2
.
5
V
Reverse current
I
RRM
1
V
RRM
=
400
V
1
µ
A
I
RRM
2
V
RRM
=
800
V
20
Terminal capacitance
C
t
V
R
=
0
V, f =
1
MHz
2
pF
Reverse recovery time
*
t
rr
I
F
=
100
mA, I
R
=
200
mA
I
rr
=
20
mA, R
L
=
100
Ω
20
45
ns
Note)
1
. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C
7031
measuring methods for diodes.
2
. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3
. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
=
50
Ω
Wave Form Analyzer
(SAS-8130)
R
i
=
50
Ω
t
p
=
2
µ
s
t
r
=
0.35 ns
δ =
0.05
I
F
=
I
R
=
100 mA
R
L
=
100
Ω
10%
Input Pulse
Output Pulse
I
rr
=
0.1
×
I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Unit: mm
1: Anode
2: Cathode
Mini2-F1 Package
5
°
1.6
±
0.1
1
2
0.80
±
0.05
0.55
±
0.1
0.16
+0.1
–0.06
3.
5
±
0.
1
2.
6
±
0.
1
0.45
±
0.1
5
°
0 to 0.1
0 to 0.
3
0 to 0.
1
Marking Symbol: HB
