Transistors
1
Publication date: May 2007
SJC00373AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1820G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB1219G
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
60
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
500
mA
Peak collector current
I
CP
1
A
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
µ
A, I
E
=
0
60
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
2 mA, I
B
=
0
50
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
µ
A, I
C
=
0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
20 V, I
E
=
0
0.1
µ
A
Forward current transfer ratio
*1
h
FE1
*2
V
CE
=
10 V, I
C
=
150 mA
85
340
h
FE2
V
CE
=
10 V, I
C
=
500 mA
40
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
=
300 mA, I
B
=
30 mA
0.35
0.60
V
Transition frequency
*1
f
T
V
CB
=
10 V, I
E
=
−
50 mA, f
=
200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
6
15
pF
(Common base, input open circuited)
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Marking symbol
XQ
XR
XS
X
Product of no-rank is not classified and have no marking symbol for rank.
■
Package
•
Code
SMini3-F2
•
Marking Symbol: X
•
Pin Name
1: Base
2: Emitter
3: Collector
