Transistors
1
Publication date: February 2003
SJC00144BED
2SC3934
Silicon NPN epitaxial planar type
For high-frequency wide-band low-noise amplification
■
Features
•
High transition frequency f
T
•
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
10 V, I
E
=
0
100
nA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
2 V, I
C
=
0
1
µ
A
Forward current transfer ratio
h
FE
V
CE
=
10 V, I
C
=
10 mA
40
Transition frequency
f
T
V
CE
=
10 V, I
C
=
10 mA, f
=
0.8 GHz
4.5
GHz
Collector output capacitance
C
ob
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
=
10 V, I
C
=
20 mA, f
=
0.8 GHz
9
12
dB
Maximum unilateral power gain
G
UM
V
CE
=
10 V, I
C
=
20 mA, f
=
0.8 GHz
12
14
dB
Noise figure
NF
V
CE
=
10 V, I
C
=
5 mA, f
=
0.8 GHz
1.3
2.5
dB
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
12
V
Emitter-base voltage (Collector open)
V
EBO
2.5
V
Collector current
I
C
30
mA
Peak collector current
I
CP
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
150
°
C
Marking Symbol: 1U
2.1
±
0.1
1.3
±
0.1
0.3
+0.1
–0.0
2.0
±
0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
This product complies with the RoHS Directive (EU 2002/95/EC).
