Transistors
1
Publication date: March 2003
SJC00042BED
2SA2028
Silicon PNP epitaxial planar type
For DC-DC converter
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
High-speed switching
•
S-Mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
−
20
V
Collector-emitter voltage (Base open)
V
CEO
−
20
V
Emitter-base voltage (Collector open)
V
EBO
−
5
V
Collector current
I
C
−
1
A
Peak collector current
I
CP
−
3
A
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
°
C
Storage temperature
T
stg
−
55 to
+
125
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
−
10
µ
A, I
E
=
0
−
20
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
−
1 mA, I
B
=
0
−
20
V
Emitter-base voltage (Collector open)
V
EBO
I
E
=
−
10
µ
A, I
C
=
0
−
5
V
Forward current transfer ratio
h
FE
V
CE
=
−
2 V, I
C
=
−
100 mA
160
560
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
−
200 mA, I
B
=
−
10 mA
−
40
−
100
mV
Transition frequency
f
T
V
CB
=
−
10 V, I
E
=
10 mA, f
=
200 MHz
170
MHz
Collector output capacitance
C
ob
V
CB
=
−
10 V, I
E
=
0, f
=
1 MHz
20
30
pF
(Common base, input open circuited)
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Marking Symbol: AT
2.1
±
0.1
1.3
±
0.1
0.3
+0.1
–0.0
2.0
±
0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0 to 0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5˚
10˚
This product complies with the RoHS Directive (EU 2002/95/EC).
