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Transistors

1

Publication date: March 2003

SJC00003BED

2SA0720A 

(2SA720A)

Silicon PNP epitaxial planar type

For low-frequency driver amplification

Complementary to 2SC1318A

Features

High collector-emitter voltage (Base open) V

CEO

Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier

Absolute Maximum Ratings  

T

a

 

=

 25

°

C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

V

CBO

80

V

Collector-emitter voltage (Base open)

V

CEO

70

V

Emitter-base voltage (Collector open)

V

EBO

5

V

Collector current

I

C

 0.5

A

Peak collector current

I

CP

1

A

Collector power dissipation

P

C

625

mW

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

55 to

 +

150

°

C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

CBO

I

C

 

=

 

10 

µ

A, I

E

 

=

 0

80

V

Collector-emitter voltage (Base open)

V

CEO

I

C

 

=

 

2 mA, I

B

 

=

 0

70

V

Emitter-base voltage (Collector open)

V

EBO

I

E

 

=

 

10 

µ

A, I

C

 

=

 0

5

V

Collector-base cutoff current (Emitter open)

I

CBO

V

CB

 

=

 

20 V, I

E

 

=

 0

 0.1

µ

A

Forward current transfer ratio 

*1

h

FE1

 

*2

V

CE

 

=

 

10 V, I

C

 

=

 

150 mA

85

240

h

FE2

V

CE

 

=

 

10 V, I

C

 

=

 

500 mA

40

Collector-emitter saturation voltage 

*1

V

CE(sat)

I

C

 

=

 

300 mA, I

B

 

=

 

30 mA

 0.2

 0.6

V

Base-emitter saturation voltage 

*1

V

BE(sat)

I

C

 

=

 

300 mA, I

B

 

=

 

30 mA

 0.85

1.50

V

Transition frequency

f

T

V

CB

 

=

 

10 V, I

E

 

=

 50 mA, f 

=

 200 MHz

120

MHz

Collector output capacitance

C

ob

V

CB

 

=

 

10 V, I

E

 

=

 0, f 

=

 1 MHz

20

30

pF

(Common base, input open circuited)

Electrical Characteristics  

T

a

 

=

 25

°

±

 3

°

C

5.0

±

0.2

0.7

±

0.1

0.45

+0.15

–0.1

2.5

+0.6

–0.2

0.45

+0.15

–0.1

2.5

1

2 3

+0.6

–0.2

4.0

±

0.2

5.1

±

0.2

12.9

±

0.5

2.3

±

0.2

0.7

±

0.2

Rank

Q

R

h

FE1

85 to 170

120 to 240

Unit: mm

1: Emitter
2: Collector
3: Base

EIAJ: SC-43A

TO-92-B1 Package

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *1: Pulse measurment

*2: Rank classification

Note) The part number in the parenthesis shows conventional part number.

This product complies with the RoHS Directive (EU 2002/95/EC).

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