Omron G3DZ-F4B, Техническое описание

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G6D-F4B/G3DZ-F4B G6D-F4B/G3DZ-F4B
3
Characteristics
Item G6D-F4B e
Relay output
Contact resistance (see note 2) 100 m
Ω
max.
Must operate time (see note 3) 10 ms max.
Release time (see note 3) 10 ms max.
Insulation resistance 1,000 M
Ω
min. (at 500 VDC)
Dielectric strength
2,000 VAC, 50/60 Hz for 1 min between coil and contacts.
e ec c s e g
750 VAC, 50/60 Hz for 1 min between contacts of same polarity
Impulse withstand voltage (between
coil and contacts) 4,000 V (1.2 50
µ
s)
Vibration resistance Destruction:10 to 55 Hz, 1.5-mm double amplitude
Malfunction:10 to 55 Hz, 1.5-mm double amplitude
Shock resistance Destruction:500 m/s
2
S oc es s a ce
Malfunction:100 m/s
2
Life expectancy Mechanical:20,000,000 operations min. (at 18,000 operations/hr) e e pec a cy
Electrical: 100,000 operations min. (3 A at 250 VAC, resistive load)
100,000 operations min. (3 A at 30 VDC, resistive load) (at 1,800 operations /hr)
Ambient temperature Operating: –25
°
C to 55
°
C (with no icing)
Storage: –25
°
C to 55
°
C (with no icing)
Ambient humidity Operating: 45% to 85%
Weight Approx. 65 g
Note: 1. The above values are initial values.
2. Measurement condition: 1 A at 5 VDC
3. Ambient temperature condition: 23
°
C
Item
G3DZ-F4B
e
Power MOS FET relay output
Must operate time 10 ms max.
Release time 15 ms max.
Output ON-resistance 2.4
Ω
max.
Leakage current at OFF state 10
µ
A max. (at 125 VDC)
Insulation resistance 100 M
Ω
min. (at 500 VDC)
Dielectric strength 2,000 VAC, 50/60 Hz for 1 min between input and output terminals
Vibration resistance 10 to 55 Hz, 1.5-mm double amplitude
Shock resistance 500 m/s
2
Ambient temperature Operating: –25
°
C to 55
°
C (with no icing)
Storage: –25
°
C to 55
°
C (with no icing)
Ambient humidity Operating: 45% to 85%
Weight Approx. 65 g