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E3X-DA-S
16
E3X-DA
@
R-S (
@
:21/51/7/9)
FPD, Semiconductors, and Solar Cells
Sensing
method
Application
Operating
temperature
Model
Sensing distance (mm)
Tough mode
High-resolution
mode
Standard
mode
High-speed
mode
Super-high-
speed mode
Limited-
reflective
Glass presence detection
70 °C
E32-L16-N 2M
0 to 15
0 to 12
Glass substrate alignment
E32-A08 2M
10 to 20
300 °C
E32-A08H2 2M
70 °C
E32-A12 2M
12 to 30
Glass substrate mapping
E32-A09 2M
15 to 38
300 °C
E32-A09H2 2M
20 to 30 (center 25)
Wet processes:
Cleaning, Resist
developing and etching
60 °C
E32-L11FP 2M
8 to 20 mm from tip of lens (Recommended detection distance: 11 mm),
19 to 31 mm from center of mounting hole A (Recommended detection distance: 22 mm)
Wet process:
Resist stripping
85 °C
E32-L11FS 2M
8 to 20 mm from tip of lens (Recommended detection distance: 11 mm),
32 to 44 mm from center of mounting hole A (Recommended detection distance: 35 mm)
Through-
beam
Wafer mapping
70 °C
E32-A03 2M
1,610
1,150
890
600
250
E32-A03-1 2M
E32-A04 2M
640
460
340
225
100
E32-T24SR 2M
2,100
1,500
1,100
750
300
E32-T24S 2M
2,400
1,750
1,300
870
350