1999 Apr 22
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PMST6428; PMST6429
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 50 V).
APPLICATIONS
•
General purpose switching and amplification in e.g.
telephony and professional communication equipment.
DESCRIPTION
NPN transistor in an SC-70; SOT323 plastic package.
MARKING
Note
1.
∗
= - : Made in Hong Kong.
∗
= t : Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE
PMST6428
∗
1K
PMST6429
∗
1L
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline (SC-70; SOT323) and
symbol.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
PMST6428
−
60
V
PMST6429
−
55
V
V
CEO
collector-emitter voltage
open base
PMST6428
−
50
V
PMST6429
−
45
V
V
EBO
emitter-base voltage
open collector
−
6
V
I
C
collector current (DC)
−
100
mA
I
CM
peak collector current
−
200
mA
I
BM
peak base current
−
100
mA
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
−
200
mW
T
stg
storage temperature
−
65
+150
°
C
T
j
junction temperature
−
150
°
C
T
amb
operating ambient temperature
−
65
+150
°
C
