NXP Semiconductors PBLS4004D, Лист данных продукта

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1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
n
Low V
CEsat
(BISS) and resistor-equipped transistor in one package
n
Low threshold voltage (< 1 V) compared to MOSFET
n
Low drive power required
n
Space-saving solution
n
Reduction of component count
1.3 Applications
n
Supply line switches
n
Battery charger switches
n
High-side switches for LEDs, drivers and backlights
n
Portable equipment
1.4 Quick reference data
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al
2
O
3
, standard footprint.
[2] Pulse test: t
p
≤
300
µ
s;
δ ≤
0.02.
PBLS4004D
40 V PNP BISS loadswitch
Rev. 03 — 6 January 2009 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
V
CEO
collector-emitter voltage open base - -
−
40 V
I
C
collector current
[1]
- -
−
1 A
R
CEsat
collector-emitter saturation
resistance I
C
=
−
500 mA;
I
B
=
−
50 mA
[2]
- 240 340 m
Ω
TR2; NPN resistor-equipped transistor
V
CEO
collector-emitter voltage open base - - 50 V
I
O
output current - - 100 mA
R1 bias resistor 1 (input) 15.4 22 28.6 k
Ω
R2/R1 bias resistor ratio 0.8 1 1.2