NXP Semiconductors CGD944C, Лист данных продукта

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CGD944C_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 6 June 2007 3 of 7
NXP Semiconductors
CGD944C
870 MHz, 25 dB gain power doubler amplifier
5. Characteristics
[1] G
p
at 870 MHz minus G
p
at 40 MHz.
[2] flatness straight line (peak to valley).
[3] 79 NTSC channels: 55.25 MHz to 547.25 MHz, 48 dBmV output level; + 53 NTSC channels 553.25 MHz to 997.25 MHz, 38 dBmV
output level.
[4] V
o
= 48 dBmV
[5] Direct Current (DC)
Table 5. Characteristics
Bandwidth to 870 MHz; V
B
= 24 V (DC); T
mb
= 35
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
G
p
power gain f = 870 MHz 24 25 26 dB
SL
sl
slope straight line f = 40 MHz to 870 MHz
[1]
1 - 2 dB
FL flatness of frequency response f = 40 MHz to 870 MHz
[2]
- 0.5 - dB
CTB composite triple beat 79 + 53 flat NTSC channels
[3]
-
−
68
−
66 dB
98 flat PAL channels
[4]
-
−
66 - dB
CSO composite second-order distortion 79 + 53 flat NTSC channels
[3]
-
−
70
−
67 dB
98 flat PAL channels
[4]
-
−
66 - dB
Xmod cross modulation 79 + 53 flat NTSC channels
[3]
-
−
66
−
58 dB
RL
in
input return loss f = 40 MHz to 80 MHz 20 - - dB
f = 80 MHz to 160 MHz 19 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 18 - - dB
RL
out
output return loss f = 40 MHz to 80 MHz 20 - - dB
f = 80 MHz to 160 MHz 19 - - dB
f = 160 MHz to 320 MHz 18 - - dB
f = 320 MHz to 640 MHz 18 - - dB
f = 640 MHz to 870 MHz 18 - - dB
NF noise figure f = 50 MHz - 3.5 5.0 dB
f = 870 MHz - 3.5 5.0 dB
I
tot
total current V
B
= 24 V
[5]
- 450 - mA